All-solution-printed oxide thin-film transistors (TFTs) were fabricated using a direct thermal nanoimprinting technique termed nanorheology printing (n-RP). n-RP is a printing technology that utilizes the thermoplastic properties of oxide gels. We prepared such thermoplastic oxide gels and developed a suitable alignment system. Using this system, TFTs designed for use in active-matrix arrays were fabricated with a high alignment accuracy of less than 5 mu m. We succeeded in incorporating these TFTs into all-solution-printed oxide TFT arrays, and the operation of the transistors in the arrays was confirmed.