岡本大 (Okamoto Dai) - 論文

Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method

Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, Norio Tokuda

Carbon 168 659 - 664 2020年10月査読有り

Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs

Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano

Japanese Journal of Applied Physics 59(4) 044003 2020年3月査読有り

Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities

Tetsuo Hatakeyama, Teruyoshi Masuda, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura

APPLIED PHYSICS EXPRESS 12(2) 201003-1 - 201003-5 2019年2月査読有り

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano

Japanese Journal of Applied Physics 57(6) 06KA04-1 - 06KA04-5 2018年6月1日査読有り

Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors

Yuki Karamoto, Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano

Japanese Journal of Applied Physics 57(6) 06KA06-1 - 06KA06-6 2018年6月1日査読有り

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Yohei Iwahashi, Mariko Hayashi, Dai Okamoto, Hiroshi Yano, Shinsuke Harada, Yoshiyuki Yonezawa, Hajime Okumura

Japanese Journal of Applied Physics 57(4) 04FA07-1 - 04FA07-7 2018年4月1日査読有り

Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test

Junjie An, Masaki Namai, Dai Okamoto, Hiroshi Yano, Hiroshi Tadano, Noriyuki Iwamuro

ELECTRONICS AND COMMUNICATIONS IN JAPAN 101(1) 24 - 31 2018年1月査読有り

異原子導入によるSiC MOSFETの特性改善

岡本, 大, 矢野裕司

応用物理 86(9) 781 - 785 2017年9月査読有り招待有り

Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model

Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, Hiroshi Yano

APPLIED PHYSICS EXPRESS 10(6) 064101-1 - 064101-4 2017年6月査読有り

Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura

APPLIED PHYSICS EXPRESS 10(4) 046601 2017年4月査読有り

Effect of boron incorporation on slow interface traps in SiO2/4H-SiC structures

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa, Hiroshi Yano

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 123(2) 2017年2月

Experimental demonstration of -730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications

Junjie An, Masaki Namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro

Technical Digest - International Electron Devices Meeting, IEDM 10.7.1 - 10.7.4 2017年1月31日査読有り

Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価

安, 俊傑, 生井, 正輝, 岡本, 大, 矢野, 裕司, 只野, 博, 岩室, 憲幸

電気学会論文誌Ｃ 137(2) 216 - 221 2017年

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

JAPANESE JOURNAL OF APPLIED PHYSICS 55(4) 04ER11 2016年4月査読有り

Experimental Demonstration of-730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications

Junjie An, Masaki Namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) IEDM16-272 - IEDM16-275 2016年

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Dai Okamoto, Mitsuo Okamoto, Tadayoshi Deguchi, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Shinsuke Harada, Yasunori Tanaka, Yoshiyuki Yonezawa, Tomohisa Kato, Shuji Katakami, Manabu Arai, Manabu Takei, Shinichiro Matsunaga, Kazuto Takao, Takashi Shinohe, Toru Izumi, Toshihiko Hayashi, Syuuji Ogata, Katsunori Asano, Hajime Okumura, Tsunenobu Kimoto

IEEE TRANSACTIONS ON ELECTRON DEVICES 62(2) 396 - 404 2015年2月査読有り

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

JOURNAL OF APPLIED PHYSICS 117(2) 2015年1月査読有り

Exact characterization of threshold voltage instability in 4H-SiC MOSFETs by non-relaxation method

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

Materials Science Forum 821-823 685 - 688 2015年査読有り

Device performance and switching characteristics of 16 kV ultrahigh-voltage SiC flip-type n-channel IE-IGBTs

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Deguchi, T. Kato, S. Harada, Y. Tanaka, D. Okamoto, M. Sometani, M. Okamoto, M. Yoshikawa, T. Tsutsumi, Y. Sakai, N. Kumagai, S. Matsunaga, M. Takei, M. Arai, T. Hatakeyama, K. Takao, T. Shinohe, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, M. Miyajima, H. Kimura, A. Otsuki, K. Fukuda, H. Okumura, T. Kimoto

Materials Science Forum 821-823 842 - 846 2015年査読有り

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa, Hiroshi Yano

IEEE ELECTRON DEVICE LETTERS 35(12) 1176 - 1178 2014年12月査読有り

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