堂島大地 (Daichi Dojima) - マイポータル

基本情報

外部リンク: http://researchers.kwansei.ac.jp/view?l=ja&u=200001433&o=affilation&sm=affiliation&sl=ja&sp=0&target=kenkyu-gyoseki#item_kihon

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Kohei Toda, Daichi Dojima, Kiyoshi Kojima, Hiroshi Mihara, Shinichi Mitani, Tadaaki Kaneko

Solid State Phenomena 344 9-14 2023年6月6日査読有り
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility

Daichi Dojima, Mizuho Maki, Daichi Dansako, Kohei Toda, Tadaaki Kaneko

Solid State Phenomena 343 29-36 2023年5月30日査読有り招待有り筆頭著者
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Daichi Dojima, Daichi Dansako, Mizuho Maki, Kohei Toda, Tadaaki Kaneko

Solid State Phenomena 343 43-50 2023年5月30日査読有り筆頭著者
A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality

Daichi Dojima, Moeko Matsubara, Hideaki Minamiyama, Tadaaki Kaneko

Materials Science Forum 1062 28-32 2022年5月31日査読有り筆頭著者

大口径4H-SiC(0001)ウェハに残留した加工変質層の可視化とエピ欠陥への影響

堂島大地, 金子忠昭

先進パワー半導体分科会第10回講演会 2023年11月30日招待有り
Effect of Sub-surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PLI Crystal Defect Visibility

Daichi Dojima, Mizuho Maki, Daichi Dansako, Kohei Toda, Tadaaki Kaneko

19th International Conference on Silicon Carbide and Related Materials 2022年9月12日招待有り
Precise control of 4H-SiC (0001) step edges for the growth of zero-layer epitaxial graphene

Daichi Dojima, Tadaaki Kaneko

Advanced Materials Congress 2019年6月11日招待有り
An application of Si-vapor etching to control the surface stability of 4H-SiC (0001) on-axis substrate revealed by LE-ECCI of SEM

Daichi Dojima, Kazunori Koide, Natsuki Yoshida, Tomoya Ihara, Koji Ashida, Tadaaki Kaneko

International Conference on Silicon Carbide and Related Materials 2017年9月21日
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique

Daichi Dojima, Koji Ashida, Tadaaki Kaneko

21st American Conference on Crystal Growth and Epitaxy 2017年7月31日
Kinetically controlled growth of uniform (6√3×6√3)R30º graphene precursor layer on 4H-SiC(0001)

Daichi Dojima, Yasunori Kutsuma, Koji Ashida, Tadaaki Kaneko

11th European Conference on Silicon Carbide & Related Materials 2016年9月26日