2021年6月15日
Effects of Silicon and Manganese Contents on V-Bending in High-Strength TRIP-Aided Dual-Phase Steel Sheets with Polygonal Ferrite Matrix
ISIJ International
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 61
- 号
- 6
- 開始ページ
- 1980
- 終了ページ
- 1989
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.2355/isijinternational.isijint-2020_719
- 出版者・発行元
- Iron and Steel Institute of Japan
Effects of silicon and manganese contents on V-bending in high -strength TRIP-aided dual -phase (TDP) steel sheets with polygonal ferrite matrix were investigated for automotive applications. V-bending test was performed on a hydraulic testing machine at a processing speed of 1 mm/min, using a rectangular specimen (50 mm in length, 5 mm in width, 1.2 mm in thickness), 88-degree punch (2.0 mm in punch radius), and 88-degree die (12 mm in die width, 0.8 mm in die radius). The main results are as follows.(1) The 0.2C-(1.0-2.5)Si-(1.0-2.0)Mn, mass% TDP steel sheets were able to perform V-bending by strain induced martensitic transformation of TRIP effect. On the other hand, ferrite-martensite dual -phase (MDPO) steel sheet of 900 MPa grade was not able to perform 90-degree V-bending because of initiation of crack on an outer surface.(2) The 0.2C- 2.5Si-1.5Mn, mass% TDP-G steel sheet of 980 MPa grade was able to enable the 90-degree V-bending that considered an amount of springback (Delta theta = theta(1) - theta(2)), in which the 81 and the 82 are a bending angle on loading and a bending angle after unloading respectively, of more than 2 -degree by controlling a displacement of punch bottom dead center.
- リンク情報
-
- DOI
- https://doi.org/10.2355/isijinternational.isijint-2020_719
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000672651100027&DestApp=WOS_CPL
- URL
- https://www.jstage.jst.go.jp/article/isijinternational/61/6/61_ISIJINT-2020_719/_pdf
- ID情報
-
- DOI : 10.2355/isijinternational.isijint-2020_719
- ISSN : 0915-1559
- eISSN : 1347-5460
- Web of Science ID : WOS:000672651100027