論文

査読有り
2019年1月

A CMOS Proximity Capacitance Image Sensor with 16μ m Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames per Second

Technical Digest - International Electron Devices Meeting, IEDM
  • M. Yamamoto
  • ,
  • R. Kuroda
  • ,
  • M. Suzuki
  • ,
  • T. Goto
  • ,
  • H. Hamori
  • ,
  • S. Murakami
  • ,
  • T. Yasuda
  • ,
  • S. Sugawa

2018-December
開始ページ
660
終了ページ
663
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/IEDM.2018.8614636

© 2018 IEEE. A 16μ m pixel pitch 60 frames per second CMOS proximity capacitance image sensor fabricated by a 0.18μ m CMOS process technology is presented. By the introduction of noise cancelling operation, both fixed pattern noise and kTC noise are significantly reduced, resulting in the 0.1aF (10 -19 F) detection accuracy. Proximity capacitance imaging results using the developed sensor are also demonstrated.

リンク情報
DOI
https://doi.org/10.1109/IEDM.2018.8614636
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85061777664&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85061777664&origin=inward
ID情報
  • DOI : 10.1109/IEDM.2018.8614636
  • ISSN : 0163-1918
  • SCOPUS ID : 85061777664

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