Oct, 2021
Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions
SN Applied Sciences
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- Volume
- 3
- Number
- 10
- Language
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1007/s42452-021-04774-3
- Publisher
- Springer Science and Business Media LLC
<sec>
<title>Abstract</title>
Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states.
</sec><sec>
<title>Article Highlights</title>
<list list-type="bullet">
<list-item>
We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction.
</list-item>
<list-item>
The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.
</list-item>
<list-item>
We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.
</list-item>
</list>
</sec><sec>
<title>Graphic abstract</title>
</sec>
<title>Abstract</title>
Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states.
</sec><sec>
<title>Article Highlights</title>
<list list-type="bullet">
<list-item>
We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction.
</list-item>
<list-item>
The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.
</list-item>
<list-item>
We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.
</list-item>
</list>
</sec><sec>
<title>Graphic abstract</title>
</sec>
- Link information
- ID information
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- DOI : 10.1007/s42452-021-04774-3
- ISSN : 2523-3963
- eISSN : 2523-3971