奥村宏典 (Hironori Okumura) - 論文 - researchmap

論文

25

表示件数

Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy

Okumura,Hironori

Japanese Journal of Applied Physics 59(7) 075503 2020年6月査読有り
Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination

Okumura, Hironori, Tanaka, Taketoshi

Japanese Journal of Applied Physics 58(12) 120902 2019年12月査読有り
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm

Lemettinen, Jori, Chowdhury, Nadim, Okumura, Hironori, Kim, Iurii, Suihkonen, Sami, Palacios, Tomas

IEEE ELECTRON DEVICE LETTERS 40(8) 1245 - 1248 2019年8月査読有り
Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

Okumura,Hironori, Kato,Yuji, Oshima,Takayoshi, Palacios,Tomás

Jpn. J. Appl. Phys. 58(SB::S) SBBD12 2019年3月査読有り
Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution

Okumura, Hironori

JAPANESE JOURNAL OF APPLIED PHYSICS 58(2) 2019年2月査読有り
N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications

Lemettinen, Jori, Okumura, Hironori, Palacios, Tomás, Suihkonen, Sami

Applied Physics Express 11(10) 101002 2018年9月査読有り
AlN metal–semiconductor field-effect transistors using Si-ion implantation

Okumura, Hironori, Suihkonen, Sami, Lemettinen, Jori, Uedono, Akira, Zhang, Yuhao, Piedra, Daniel, Palacios, Tomás

JAPANESE JOURNAL OF APPLIED PHYSICS 57(4) 04FR11 2018年4月1日査読有り
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

J. Lemettinen, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen

Journal of Crystal Growth 487 12 - 16 2018年4月1日査読有り
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen

Journal of Crystal Growth 487 50 - 56 2018年4月1日査読有り
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, Min Sun, Daniel Piedra, Christopher Hatem, Travis J. Anderson, Lunet E. Luna, Anindya Nath, Andrew D. Koehler, Hironori Okumura, Jie Hu, Xu Zhang, Xiang Gao, Boris N. Feigelson, Karl D. Hobart, Tomas Palacios

IEEE ELECTRON DEVICE LETTERS 38(8) 1097 - 1100 2017年8月査読有り
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Hironori Okumura, Denis Martin, Nicolas Grandjean

APPLIED PHYSICS LETTERS 109(25) 2016年12月
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Akira Uedono, Marco Malinverni, Denis Martin, Hironori Okumura, Shoji Ishibashi, Nicolas Grandjean

JOURNAL OF APPLIED PHYSICS 119(24) 2016年6月査読有り
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Hironori Okumura, Denis Martin, Marco Malinverni, Nicolas Grandjean

APPLIED PHYSICS LETTERS 108(7) 072102 2016年2月査読有り
Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy

奥村,宏典

Applied Physics Express 7(9) 095501 2014年9月査読有り
Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps

Hironori Okumura, Tsunenobu Kimoto, Jun Suda

APPLIED PHYSICS LETTERS 105(7) 071603 2014年8月査読有り
Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy

Okumura,Hironori

APPLIED PHYSICS LETTERS 104(1) 012111 2014年6月査読有り
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy

Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda

Japanese Journal of Applied Physics 52(8) 2013年8月査読有り
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)

Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda

Applied Physics Express 6(6) 62604 2013年6月査読有り
Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy

Hironori Okumura, Tsunenobu Kimoto, Jun Suda

APPLIED PHYSICS EXPRESS 5(10) 2012年10月査読有り
AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy

Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda

Applied Physics Express 5(5) 2012年5月査読有り

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