奥村元 (Hajime Okumura) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センター (名誉リサーチャー)

学位: 工学博士(1990年6月大阪大学)

J-GLOBAL ID: 200901096023947183
researchmap会員ID: 5000005973

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H71841137

研究分野

自然科学一般 / 半導体、光物性、原子物理 / 材料物性、半導体デバイス、パワー半導体

論文

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

Shiyang Ji, Ryoji Kosugi, Kazutoshi Kojima, Kohei Adachi, Yasuyuki Kawada, Kazuhiro Mochizuki, Yoshiyuki Yonezawa, Sadafumi Yoshida, Hajime Okumura

Journal of Crystal Growth 546 2020年9月15日
Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato

Journal of Applied Physics 128(10) 2020年9月14日
Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates

Xu-Qiang Shen, Kazutoshi Kojima, Hajime Okumura

Applied Physics Express 13(3) 2020年3月1日
Low V _F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates

Akihiro Koyama, Mitsuru Sometani, Kensuke Takenaka, Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Kazuma Eto, Tomohisa Kato, Junji Senzaki, Yoshiyuki Yonezawa …

Japanese Journal of Applied Physics 59(SG) SGGD14-SGGD14 2020年2月28日
Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance

Kazutoshi Kojima, Hajime Okumura

Applied Physics Letters 116(1) 2020年1月6日
A study of CVD growth parameters to fill 50-μm-deep 4H-SiC trenches

Shiyang Ji, Ryoji Kosugi, Kazutoshi Kojima, Kohei Adachi, Yasuyuki Kawada, Kazuhiro Mochizuki, Akiyo Nagata, Yasuko Matsukawa, Yoshiyuki Yonezawa, Sadafumi Yoshida …

Materials Science Forum 963 131-135 2019年
Application of defect conversion layer by solution growth for reduction of tsds in 4H-SiC bulk crystals by PVT growth

Naoyoshi Komatsu, Takeshi Mitani, Yuichiro Hayashi, Hiromasa Suo, Tomohisa Kato, Hajime Okumura

Materials Science Forum 963 71-74 2019年
Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate

Keiko Masumoto, Satoshi Segawa, Toshiyuki Ohno, Susumu Tsukimoto, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura

Japanese Journal of Applied Physics 58 2019年
Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

Xu-Qiang Shen, Kazutoshi Kojima, Mitsuaki Shimizu, Hajime Okumura

CrystEngComm 20(45) 7364-7370 2018年
Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, Yasuo Cho

Materials Science Forum 897 159-162 2017年
Two-dimensional imaging of trap distribution in SiO2/SiC interface using local deep level transient spectroscopy based on super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Materials Science Forum 897 127-130 2017年
Correlation between local strain distribution and microstructure of grinding-induced damage layers in 4H-SiC(000¯1)

Susumu Tsukimoto, Tatsuhiko Ise, Genta Maruyama, Satoshi Hashimoto, Tsuguo Sakurada, Junji Senzaki, Tomohisa Kato, Kazutoshi Kojima, Hajime Okumura

Materials Science Forum 897 177-180 2017年査読有り
Nondestructive and local evaluation of SiO2/SiC interface using super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Materials Science Forum 858 469-472 2016年
Characterization of thermally oxidized SiO2/SiC interfaces by leakage current under high electric field, cathode luminescence (CL), X-ray photoelectron spectroscopy (XPS), and high-resolution Rutherford backscattering spectroscopy (HR-RBS)

Yuji Kiuchi, Hidenori Kitai, Hiromu Shiomi, Masatoshi Tsujimura, Daisuke Nakata, Shinsuke Harada, Yoshiyuki Yonezawa, Kenji Fukuda, Kunihiro Sakamoto, Kimiyoshi Yamasaki …

Materials Science Forum 858 449-452 2016年
Development of high-voltage 4H-SiC PiN diodes on 4° and 8° off-axis substrates

Dai Okamoto, Yasunori Tanaka, Norio Matsumoto, Makoto Mizukami, Chiharu Ota, Kazuto Takao, Kenji Fukuda, Hajime Okumura

Materials Science Forum 740-742 907-910 2013年

MISC

Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

Review of Scientific Instruments 91(12) 2020年12月1日
Homoepitaxial growth on a 4H-SiC C-face substrate

Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

CHEMICAL VAPOR DEPOSITION 12(8-9) 489-494 2006年8月
Investigation of in-grown dislocations in 4H-SiC epitaxial layer

MATERIALS SCIENCE FORUM 527-529 147-152 2006年
Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals

S Nakashima, T Kato, S Nishizawa, T Mitani, H Okumura, T Yamamoto

JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153(4) G319-G323 2006年
Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN

T Kitamura, XQ Shen, M Sugiyama, H Nakanishi, M Shimizu, H Okumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(1A) 57-60 2006年1月
Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

K Kojima, S Kuroda, H Okumura, K Arai

APPLIED PHYSICS LETTERS 88(2) 021907-1-021907-3 2006年1月
Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

K Kojima, S Kuroda, H Okumura, K Arai

MICROELECTRONIC ENGINEERING 83(1) 79-81 2006年1月
Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy

XQ Shen, H Okumura, H Matsuhata

APPLIED PHYSICS LETTERS 87(10) 101910-1-101910-3 2005年9月
Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

S Nakashima, T Mitani, J Senzaki, H Okumura, T Yamamoto

JOURNAL OF APPLIED PHYSICS 97(12) 123507-1-123507-8 2005年6月
Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE

XQ Shen, M Shimizu, T Yamamoto, Y Honda, H Okumura

JOURNAL OF CRYSTAL GROWTH 278(1-4) 378-382 2005年5月
Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer

K. Kojima, S. Nishizawa, S. Kuroda, H. Okumura, K. Arai

JOURNAL OF CRYSTAL GROWTH 275(1-2) E549-E554 2005年2月
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire(0001) substrates

XQ Shen, H Matsuhata, H Okumura

APPLIED PHYSICS LETTERS 86(2) 021912-1-021912-3 2005年1月
Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE

IPO CONFERENCE SERIES 184 231-234 2005年
GaN/AlN super-lattice structures on vicinal sapphire (0001) substrates grown by rf-MBE

phys. stat. sol. (c) 2(7) 2385-2388 2005年
2-inch 4H-SiC homoepitaxial layer grown on on-axis C-face substrate by CVD method

MATERIALS SCIENCE FORUM 483-485 93-96 2005年
Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

MATERIALS SCIENCE FORUM 483-485 147-150 2005年
Homoepitaxial growth of 4H-SiC on on-axis (0001(-)) C-face substrates by chemical vapor depositon

K Kojima, H Okumura, S Kuroda, K Arai

JOURNAL OF CRYSTAL GROWTH 269(2-4) 367-376 2004年9月
Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

K Jeganathan, M Shimizu, H Okumura

JOURNAL OF APPLIED PHYSICS 95(7) 3761-3764 2004年4月
Deep-ultraviolet Raman microspectroscopy: Characterization of wide-gap semiconductors

S Nakashima, H Okumura, T Yamamoto, R Shimidzu

APPLIED SPECTROSCOPY 58(2) 224-229 2004年2月
GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS 43(12A) L1537-L1539 2004年

もっとみる

共同研究・競争的資金等の研究課題

シリコンカーバイドエピタキシャル結晶成長のモデリングとエピタキシャル膜特性向上

日本学術振興会科学研究費助成事業特別研究員奨励費 2004年 - 2005年

奥村元, YUN Jungheum
ワイドギャップ半導体の結晶成長評価とデバイス応用