藤倉序章 (Hajime Fujikura) - マイポータル

基本情報

所属: 住友化学株式会社情報電子化学品研究所（茨城）フェロー

学位: Formation of InGaAs Quantum Structures by Molecular Beam Epitaxy and Control of Their Surfaces(1996年9月北海道大学)

ORCID iD: https://orcid.org/0000-0002-7281-6151
J-GLOBAL ID: 202401013983045944
researchmap会員ID: R000071087

論文

Effects of 850 °C annealing on near-surface defects in Mg-ion-implanted GaN examined using MOS structures

Genta Shindo, Yuki Hatakeyama, Hajime Fujikura, Shota Kaneki, Masafumi Yokoyama, Fumimasa Horikiri, Masamichi Akazawa

AIP Advances 2025年8月1日
6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki, Toshio Kitamura, Fumimasa Horikiri, Hajime Fujikura, Shinichiro Takatani, Tomoyoshi Mishima

Applied Physics Letters 2025年1月6日
Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Takuya Maeda, Yusuke Wakamoto, Shota Kaneki, Hajime Fujikura, Atsushi Kobayashi

Applied Physics Letters 2024年7月8日
Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima

Applied Physics Letters 2024年6月3日
Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods

Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda

Journal of Crystal Growth 2024年6月
Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers

Masafumi Yokoyama, Fumimasa Horikiri, Hisashi Mori, Taichiro Konno, Hajime Fujikura

Applied Physics Express 2024年5月1日
Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae, Jun Suda, Hajime Fujikura

Applied Physics Letters 2024年1月1日
Hydride vapor phase epitaxial growth of AlGaN

Hajime Fujikura

Applied Physics Express 2022年8月1日
Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Kimura, T., Konno, T., Fujikura, H.

Applied Physics Letters 118(18) 2021年5月3日
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-highpressure annealing

Hirukawa, K., Sumida, K., Sakurai, H., Fujikura, H., Horita, M., Otoki, Y., Sierakowski, K., Bockowski, M., Kachi, T., Suda, J.

Applied Physics Express 14(5) 2021年
Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Fujikura, H., Konno, T., Kimura, T., Narita, Y., Horikiri, F.

Applied Physics Letters 117(1) 2020年7月6日
AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates

Fujikura, H., Konno, T., Kimura, T., Miyake, H.

Applied Physics Express 13(2) 2020年
Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

Kojima, K., Horikiri, F., Narita, Y., Yoshida, T., Fujikura, H., Chichibu, S.F.

Applied Physics Express 13(1) 2020年
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Kanegae, K., Fujikura, H., Otoki, Y., Konno, T., Yoshida, T., Horita, M., Kimoto, T., Suda, J.

Applied Physics Letters 115(1) 2019年7月1日
Growth of InGaN films on hardness-controlled bulk GaN substrates

Sumiya, M., Fukuda, K., Fujikura, H., Konno, T., Suzuki, T., Fujimoto, T., Yoshida, T., Ueda, S., Watanabe, K., Ohnishi, T. …

Applied Physics Letters 115(17) 2019年
Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy

Fujikura, H., Konno, T.

Applied Physics Letters 113(15) 2018年
Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

Fujikura, H., Hayashi, K., Horikiri, F., Narita, Y., Konno, T., Yoshida, T., Ohta, H., Mishima, T.

Applied Physics Express 11(4) 2018年
Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2-6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Fujikura, H., Konno, T., Suzuki, T., Kitamura, T., Fujimoto, T., Yoshida, T.

Japanese Journal of Applied Physics 57(6) 2018年
Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura, H., Konno, T., Yoshida, T., Horikiri, F.

Japanese Journal of Applied Physics 56(8) 2017年
Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 10⁶ cm⁻² range by novel two-side hydride vapor-phase epitaxial growth

Fujikura, H., Konno, T.

Journal of Crystal Growth 475 2017年

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