The application of atmospheric pressure thermal plasma jet (TPJ) annealing to the high-temperature and high-speed thermal oxidation of Si-face of 4H-SiC wafer is reported. A high SiO2 film growth rate of 288nm min(-1) was obtained at an oxidation temperature of 1640 degrees C without intentional dry O-2 gas feeding. Ambient analysis suggested that ozone generated from oxygen in the ambient air by the plasma irradiation was supplied to the SiC surface. It is implied that a mono-oxygen decomposed from ozone was diffused into the oxide growth interface. As a result, high-speed oxidation occurred by combination of high-temperature TPJ annealing and ozone feeding. (C) 2017 The Japan Society of Applied Physics