Tatsuro Hanajiri

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Name
Tatsuro Hanajiri
Affiliation
Toyo University
Section
Faculty of Science and Engineering

Research Areas

 
 

Published Papers

 
Detection and Analysis of Targeted Biological Cells by Electrophoretic Coulter Method
Y. Nakajima, T Ukai, T. Shimizu, K. Ogata, S. Iwai, N. Takahashi, A. Aki, T.Mizuki,T.Maekawa and T.Hanajiri
ANALYTICAL CHEMISTRY   89(22) 12450-12457   Nov 2017   [Refereed][Invited]
Hossain J:, K. Kasahara ,D. Harada, A. T. M. Saifu Islam, R.Ishikawa, K. Ueno, T. Hanajiri, Y. Nakajima ,Y. Fujii, M.Tokuda and H.Shirai
JOURNAL OF APPLIED PHYSICS   122(5) 055010   Aug 2017   [Refereed]
Hossain, J , ; Ohki, T, Ichikawa, K, ; Fujiyama, K, Ueno, K, ; Fujii, Y, Hanajiri, T, Shirai, H
JAPANESE JOURNAL OF APPLIED PHYSICS   55(3)    Mar 2016   [Refereed]
Kumar, V.A.; Uchida, T.; Mizuki, T.; Nakajima, Y.; Katsube, Y.; Hanajiri, T.; Maekawa, T.
Advances in Natural Sciences: Nanoscience & Nanotechnology   7(1) .015002-015013   Mar 2016   [Refereed]
Chauhan, N, Palaninathan, V, Raveendran, S, Poulose, AC, Nakajima, Y, Hasumura, T , Uchida, T, Hanajiri T, Maekawa, T, Kumar, DS,
CHEMICAL PHYSICS LETTERS   635 234-240   Aug 2015   [Refereed]
Chauhan, N, Palaninathan, V, Raveendran, S, Poulose, AC, Nakajima, Y, Hasumura, T , Uchida, T, Hanajiri T, Maekawa, T, Kumar, DS,
ADVANCED MATERIALS INTERFACES   2(5)    Mar 2015   [Refereed]
Yamada, T.; Hanajiri, T.; Toyabe, T.
IEEE Transactions on Electron Devices   61(9) 3030-3035   Sep 2014   [Refereed]
Yamada, T.; Hanajiri, T.; Toyabe, T.
IEEE Transactions on Electron Devices   61(9) 3023-3029   Sep 2014   [Refereed]
Yamada, T, Nakajima, Y, Hanajiri, T, Toyabe, T, Sugano, T
JOURNAL OF COMPUTATIONAL ELECTRONICS   13(2) 400-407   Jun 2014   [Refereed]
Baliyan, A, Nakajima, Y, Fukuda, T, Uchida, T, Hanajiri, T, Maekawa, T
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   136(3) 1047-1053   Jan 2014   [Refereed]
Yamada, T ; Abe, S ; Nakajima, Y; Hanajiri, T ; Toyabe, T ; Sugano, T
IEEE TRANSACTIONS ON ELECTRON DEVICES   60(12) 3996-4001   Dec 2013   [Refereed]
Yamada, T; Nakajima, Y; Hanajiri, T; Sugano, T
IEEE TRANSACTIONS ON ELECTRON DEVICES   60(12) 4281-4283   Dec 2013   [Refereed]
Raveendran, Sreejith;Chauhan, Neha); Nakajima, Y ; Higashi, T; Kurosu, S ; Tanizawa, Y ; Tero, R ; Yoshida, Y ; Hanajiri, T ; Maekawa, T
PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION   30(7) 573-578   Jun 2013   [Refereed]
Baliyan, Ankur; Fukuda, T; Hayasaki, Y; Uchida, T; Nakajima, Y ; Hanajiri, T; Maekawa, T
JOURNAL OF NANOPARTICLE RESEARCH   15(6) 記事番号: UNSP 1693   Jun 2013   [Refereed]
Yamada, T; Nakajima, Y; Hanajiri, T; Sugano, T
IEEE TRANSACTIONS ON ELECTRON DEVICES   60(1) 260-267   Jan 2013   [Refereed]
Baliyan, Ankur; Hayasaki, Y.; Fukuda, T; Uchida, T ; Nakajima, Y ; Hanajiri, T ; Maekawa, T
JOURNAL OF PHYSICAL CHEMISTRY C   117(1) 683-686   Jan 2013   [Refereed]
Nair, Baiju G.; Fukuda, T; Mizuki, T; Hanajiri, T ; Maekawa, T
BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS   421 763-767   May 2012   [Refereed]
Watanabe, F; Shirai, H ; Fujii, Y; Hanajiri, T
THIN SOLID FILMS   520(10) 3729-3735   Mar 2012   [Refereed]
Baliyan, Ankur; Fukuda; Uchida, T; Nakajima, Y ; Hanajiri, T ; Maekawa, T
CHEMICAL PHYSICS LETTERS   519-520 78-82   Jan 2012   [Refereed]
Baliyan, Ankur; Uchida, T; Fukuda, T ; Nakajima, Y ; Hanajiri, T; Maekawa, T
JOURNAL OF MATERIALS CHEMISTR   22(12) 5277-5280   Jan 2012   [Refereed]
Higashi, T; Nagaoka, Y; Minegishi, H; Echigo, A ; Usami, R ; Maekawa, T ; Hanajiri, T
CHEMICAL PHYSICS LETTERS   506(4-6) 239-242   Apr 2011   [Refereed]
Nakajima, Y; Watanabe, Y; Hanajiri, T; Toyabe, T; Sugano, T
IEEE ELECTRON DEVICE LETTERS   32(3) 237-239   Mar 2011   [Refereed]
Takahashi, N; Aki, A ; Ukai, T; Nakajima, Y; Maekawa, T; Hanajiri, T
SENSORS AND ACTUATORS B-CHEMICAL   151(2) 410-415   Jan 2011   [Refereed]
Higashi, T; Nakajima, Y; Kojima, M; Ishii, K; Inoue, A ; Maekawa, T; Hanajiri, T
CHEMICAL PHYSICS LETTERS   501(4-6) 461-464   Jan 2011   [Refereed]
Kojima, M; Chiba, T; Niishima, J ; Higashi, T ; Fukuda, T ; Nakajima, Y ; Kurosu, S ; Hanajiri, T ; Ishii, K ; Maekawa, T
NANOSCALE RESEARCH LETTERS   6 記事番号: 128   Jan 2011   [Refereed]
Nakajima, Y; Toda, T; Hanajiri, T; Toyabe, T; Sugano, T
JOURNAL OF APPLIED PHYSICS   108(12) 記事番号: 124505   Dec 2010   [Refereed]
Varghese, Saino Hanna; Nair, Remya ; Nair, Baiju G.; Hanajiri, T.; Maekawa, T; Yoshida, Y ; Kumar, D. Sakthi
CURRENT NANOSCIENCE   6(4) 331-346   Aug 2010   [Refereed]
Kumar, DS; Nair, BG; Varghese, Saino H.;Nair, Remya; Hanajiri, T ; Maekawa, T ; Yoshida, Y
JOURNAL OF BIOMATERIALS APPLICATIONS   24(6) 527-544   Feb 2010   [Refereed]
Aki, A; Ito, O; Morimoto, H; Nagaoka, Y; Nakajima, Y; Mizuki, T ; Hanajiri, T; Usami, R ; Maekawa, T
JOURNAL OF APPLIED PHYSICS   104(9) 記事番号: 094509   Nov 2008   [Refereed]
Nakajima, Y; Sasaki, K ; Hanajiri, T; Toyabe, T; Sugano, T
IEEE ELECTRON DEVICE LETTERS   29(8) 944-945   Aug 2008   [Refereed]
Urushihara, N; Iida, S; Sanada, N ; Suzuki, M ; Paul, DF ; Bryan, S ; Nakajima, Y; Hanajiri, T ; Kakushima, K ; Ahmet, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   26(4) 668-672   Jul 2008   [Refereed]
Kajiwara, K; Nakajima, Y; Hanajiri, T; Toyabe, T; Sugano, T
IEEE TRANSACTIONS ON ELECTRON DEVICES   55(7) 1702-1707   Jul 2008   [Refereed]
Aki, A; Nihei, Y; Asai, H ; Ukai, T; Morimoto, H ; Nakajima, Y ; Hanajiri, T ; Maekawa, T
SENSORS AND ACTUATORS B-CHEMICAL   131(1) 285-289   Apr 2008   [Refereed]
Nishiyama, S; Tajima, M; Nakajima, Y; Hanajiri, T; Yoshida, Y
JAPANESE JOURNAL OF APPLIED PHYSICS   47(1) 432-437   Jan 2008   [Refereed]
Fukuda, T; Maekawa, T; Hasumura, T; Rantonen, Nyrki; Ishii, K; Nakajima, Y; Hanajiri, T; Yoshida, Y; Whitby, Raymond L. D.; Mikhalovsky, S
NEW JOURNAL OF PHYSICS   9(231)    Oct 2007   [Refereed]
A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs,ERRATUM to (vol 6, pg 462, 2004)
Nakajima, Y; Tomita, H; Aoto, K; Sasaki, K; Hanajiri, T; Toyabe, T; Morikawa, T; Sugano, T
THIN SOLID FILMS   488(1-2) 337-339   Sep 2005   [Refereed]
Hanajiri, T; Niizato, M; Aoto, K; Toyabe, T; Nakajima, Y; Morikawa, T; Sugano, T
SOLID-STATE ELECTRONICS   48(10-11) 1943-1946   Oct 2004   [Refereed]
Nakajima, Y; Tomita, H; Aoto, K; Sasaki, K; Hanajiri, T; Toyabe, T; Morikawa, T; Sugano, T
THIN SOLID FILMS   462 6-10   Sep 2004   [Refereed]
Hanajiri, T; Aoto, K; Hoshino, T; Niizato, M; Nakajima, Y; Toyabe, T; Morikawa, T; Sugano, T; Akagi, Y
COMPUTATIONAL MATERIALS SCIENCE   30(3-4) 235-241   Aug 2004   [Refereed]
Nakajima, Y; Sasaki, K; Hanajiri, T; Toyabe, T; Morikawa, T; Sugano, T
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   24(1-2) 92-95   Aug 2004   [Refereed]
Nakajima, Y; Tomita, H; Aoto, K; Ito, N; Hanajiri, T; Toyabe, T; Morikawa, T; Sugano, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42(48) 2004-2008   Apr 2003   [Refereed]
Hanajiri, T; Toyabe, T; Sugano, T
SOLID-STATE ELECTRONICS   45(12) 2077-2081   Dec 2001   [Refereed]
Hanajiri, T; Sugano, T
JOURNAL OF CRYSTAL GROWTH   210(1-3) 85-89   Mar 2000   [Refereed]
Matsumoto, Y ; Hanajiri, T ; Toyabe, T ; Sugano, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36(6B) 4143-4146   Jan 1997   [Refereed]
Matsumoto, Y; Hanajiri, T; Toyabe, T; Sugano, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   35(2B) 1126-1131   Feb 1996   [Refereed]
Matsumoto, Y.; Hanajiri, T.; Sugano, T.; Tuyen, L.T.T.; Katoda, T.
Thin Solid Films   269(1-2) 41-46   Nov 1994   [Refereed]

Misc

 
Experimental demonstration of advantages of MOSFETs on Silicon On Quartz wafers
K. Sasaki, Y. Miyazawa, K. Kajiwara, T. Yamazaki, Y. Nakajima, T. Hanajiri, T. Toyabe, and T. Sugano
Thin Film Materials and Devices Meeting (TFMD) 2004   91   Nov 2004   [Refereed]
Hanajiri T., Niizato M., Toyabe T., Sugano T., Saito A., Akagi Y.
Technical report of IEICE. VLD   100(294) 45-50   Sep 2000
We propose a new approach for quantum mechanical(QM)modeling of MOS devices for extraction of device parameters. Our formulation is applicable continuously from the subthreshold to the saturation regions, since it exactly treats the QM effects on ...
Process of Formation of Nitrided Oxides for Asymmetric Tunnel Barriers in Electron Tunneling Devices
T.Hanajiri ,T. Takahashi and T.SUGANO
Proc.of Int.Symp.on Formation, Physics and Device Application of Quantum Dot Structures   144   Sep 2000   [Refereed]
Fabrication of ultra small structures on Si utilizing self-organization
T.Hanajiri and T.SUGANO
The 8th International Conference on Defects-Recognition,Imaging and Physics in Semiconductors   72   Aug 1999   [Refereed]
Performances of Single Electron Devices with Asymmetric Tunnel Barriers
T.Hanajiri,T.Toyabe and T.Sugano
Proc.of 3rd.Int.Workshop on Quantum Functional Devices   65-66   Dec 1997   [Refereed][Invited]
Experimental observation of Coulomb Staircase in Asymmetric Tunnel Barrier Sysytem
Y.Matsumoto,T.Hanajiri,T.Toyabe and T.Sugano
Tech. Digest of Int.Electron Devices Meeting   429-432   Dec 1996
Y.Matsumoto,T.Hanajiri,T.Toyabe and T.Sugano
Proc.of Int.Symp.on Formation, Physics snd Device Application of Quantum Dot Structures   144   Nov 1996   [Refereed]
Single electron device with asymmetric tunnel barriers
Y.Matsumoto,T.Hanajiri,T.Toyabe and T.Sugano
Y.Matsumoto,T.Hanajiri,T.Toyabe andT.Sugano   186-188   Aug 1995   [Refereed]
Single Electron Transistor with Asymmetric Tunnel Barriers
New Technology Japan   23(3) 16   Jun 1995
Characterization of density trap states at the back
A.Takubo,T.Hanajiriri,T.Sugano and K.Kajiyama
Proc.of IEEE 1995 Int. Conf. on Microelctronic Test Structures   77-80   Mar 1995   [Refereed]