Tatsuro Hanajiri

Profile Information

Affiliation: Faculty of Science and Engineering, Toyo University

Degree: 博士（工学）(東京大学)

J-GLOBAL ID: 200901062135903772
researchmap Member ID: 1000168824

External link: http://quantum.eng.toyo.ac.jp/

Research Interests

Research Areas

Nanotechnology/Materials / Nanobioscience / 先端バイオナノ材料の物性評価
Nanotechnology/Materials / Nano/micro-systems / 電気泳動法、コールターカウンター
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / Semiconductor, Advanced carbon materials
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / MOSFET, Single electron transisitor (SET)

Research History

Apr, 2012 - Present

Toyo University
Apr, 2011 - Present

Faculty of Science and Engineering, Toyo University
Apr, 2007 - Present

Toyo University
Apr, 2007 - Mar, 2011

Toyo University
Apr, 1998 - Mar, 2007

Toyo University
Apr, 1994 - Mar, 1998

Toyo University

Education

Apr, 1991 - Mar, 1994

The University of Tokyo
Apr, 1989 - Mar, 1991

The University of Tokyo
Apr, 1985 - Mar, 1989

School of Science and Engineering, Waseda University

Papers

Detection and Analysis of Targeted Biological Cells by Electrophoretic Coulter Method

Yoshikata Nakajima, Tomofumi Ukai, Toshiaki Shimizu, Kazuhei Ogata, Seiki Iwai, Naohiro Takahashi, Atsushi Aki, Toru Mizuki, Toni Maekawa, Tatsuro Hanajiri

ANALYTICAL CHEMISTRY, 89(22) 12450-12457, Nov, 2017 Peer-reviewedInvited
Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells

Jaker Hossain, Koji Kasahara, Daisuke Harada, A. T. M. Saiful Islam, Ryo Ishikawa, Keiji Ueno, Tatsuro Hanajiri, Yoshikata Nakajima, Yasuhiko Fujii, Masahide Tokuda …

JOURNAL OF APPLIED PHYSICS, 122(5) 055010, Aug, 2017 Peer-reviewed
Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

Jaker Hossain, Tatsuya Ohki, Koki Ichikawa, Kazuhiko Fujiyama, Keiji Ueno, Yasuhiko Fujii, Tatsuro Hanajiri, Hajime Shirai

JAPANESE JOURNAL OF APPLIED PHYSICS, 55(3), Mar, 2016 Peer-reviewed
Synthesis of nanoparticles composed of silver and silver chloride for a plasmonic photocatalyst using an extract from a weed Solidago altissima (goldenrod)

Vemu Anil Kumar, Takashi Uchida, Toru Mizuki, Yoshikata Nakajima, Yoshihiro Katsube, Tatsuro Hanajiri, Toru Maekawa

ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 7(1) .015002-015013, Mar, 2016 Peer-reviewed
Nanomaterial-assisted PCR based on thermal generation from magnetic nanoparticles under high-frequency AC magnetic fields

Toshiaki Higashi, Hiroaki Minegishi, Akinobu Echigo, Yutaka Nagaoka, Takahiro Fukuda, Ron Usami, Toru Maekawa, Tatsuro Hanajiri

CHEMICAL PHYSICS LETTERS, 635 234-240, Aug, 2015 Peer-reviewed
N-2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir-Blodgett Technique

Neha Chauhan, Vivekanandan Palaninathan, Sreejith Raveendran, Aby Cheruvathoor Poulose, Yoshikata Nakajima, Takashi Hasumura, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa, D. Sakthi Kumar

ADVANCED MATERIALS INTERFACES, 2(5), Mar, 2015 Peer-reviewed
Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part II: Model Derivation and Validity Confirmation

Tatsuya Yamada, Tatsuro Hanajiri, Toru Toyabe

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(9) 3030-3035, Sep, 2014 Peer-reviewed
Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part I: Preparation for Modeling Based on Conformal Mapping

Tatsuya Yamada, Tatsuro Hanajiri, Toru Toyabe

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(9) 3023-3029, Sep, 2014 Peer-reviewed
Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism

Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano

JOURNAL OF COMPUTATIONAL ELECTRONICS, 13(2) 400-407, Jun, 2014 Peer-reviewed
Synthesis of an Ultradense Forest of Vertically Aligned Triple-Walled Carbon Nanotubes of Uniform Diameter and Length Using Hollow Catalytic Nanoparticles

Ankur Baliyan, Yoshikata Nakajima, Takahiro Fukuda, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 136(3) 1047-1053, Jan, 2014 Peer-reviewed
Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics

Tatsuya Yamada, Shumpei Abe, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(12) 3996-4001, Dec, 2013 Peer-reviewed
Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications (vol 60, pg 260, 2013)

Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(12) 4281-4283, Dec, 2013 Peer-reviewed
Ecofriendly route for the synthesis of highly conductive graphene using extremophiles for green electronics and bioscience

Sreejith Raveendran, Neha Chauhan, Yoshikata Nakajima, Higashi Toshiaki, Shunji Kurosu, Yuji Tanizawa, Ryugo Tero, Yasuhiko Yoshida, Tatsuro Hanajiri, Toru Maekawa …

Particle and Particle Systems Characterization, 30(7) 573-578, Jul, 2013 Peer-reviewed
CoFe2O4 nanoparticles as a catalyst: synthesis of a forest of vertically aligned CNTs of uniform diameters by plasma-enhanced CVD

Ankur Baliyan, Takahiro Fukuda, Yasuhiro Hayasaki, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa

JOURNAL OF NANOPARTICLE RESEARCH, 15(6) 記事番号: UNSP 1693, Jun, 2013 Peer-reviewed
Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications

Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(1) 260-267, Jan, 2013 Peer-reviewed
Precise Control of the Number of Walls of Carbon Nanotubes of a Uniform Internal Diameter

Ankur Baliyan, Yasuhiro Hayasaki, Takahiro Fukuda, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa

JOURNAL OF PHYSICAL CHEMISTRY C, 117(1) 683-686, Jan, 2013 Peer-reviewed
Intracellular trafficking of superparamagnetic iron oxide nanoparticles conjugated with TAT peptide: 3-dimensional electron tomography analysis

Baiju G. Nair, Takahiro Fukuda, Toru Mizuki, Tatsuro Hanajiri, Toru Maekawa

BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 421(4) 763-767, May, 2012 Peer-reviewed
Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures

Fumiya Watanabe, Hajime Shirai, Yasuhiko Fujii, Tatsuro Hanajiri

THIN SOLID FILMS, 520(10) 3729-3735, Mar, 2012 Peer-reviewed
Synthesis of diameter controlled carbon nanotubes using self-assembled catalyst nanoparticles

Ankur Baliyan, Takahiro Fukuda, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa

CHEMICAL PHYSICS LETTERS, 519-20 78-82, Jan, 2012 Peer-reviewed
Synthesis of a forest of double/triple walled CNTs of uniform diameters by plasma enhanced CVD using monodisperse iron oxide nanoparticles

Ankur Baliyan, Takashi Uchida, Takahiro Fukuda, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa

JOURNAL OF MATERIALS CHEMISTRY, 22(12) 5277-5280, 2012 Peer-reviewed

Misc.

Experimental demonstration of advantages of MOSFETs on Silicon On Quartz wafers

K. Sasaki, Y. Miyazawa, K. Kajiwara, T. Yamazaki, Y. Nakajima, T. Hanajiri, T. Toyabe, T. Sugano

Thin Film Materials and Devices Meeting (TFMD) 2004, 91, Nov, 2004 Peer-reviewed
Quantum mechanical modeling and simulation using drift-diffusion

Hanajiri T, Niizato M, Toyabe T, Sugano T, Saito A, Akagi Y

Technical report of IEICE. VLD, 100(294) 45-50, Sep 15, 2000
Process of Formation of Nitrided Oxides for Asymmetric Tunnel Barriers in Electron Tunneling Devices

T.Hanajiri, T. Takahashi, T.SUGANO

Proc.of Int.Symp.on Formation, Physics and Device Application of Quantum Dot Structures, 144, Sep, 2000 Peer-reviewed
Fabrication of ultra small structures on Si utilizing self-organization

T.Hanajiri, T.SUGANO

The 8th International Conference on Defects-Recognition,Imaging and Physics in Semiconductors, 72, Aug, 1999 Peer-reviewed
単電子デバイスにみるナノエレクトロニクス技術

花尻達郎

精密工学会春季大会. シンポジウム資料, 1999 39-42, Mar 5, 1999
単電子素子の設計および試作

花尻達郎, 菅野卓雄

東洋大学工業技術研究所報告, 20 31-35, Dec, 1998
Performances of Single Electron Devices with Asymmetric Tunnel Barriers

T.Hanajiri, T.Toyabe, T.Sugano

Proc.of 3rd.Int.Workshop on Quantum Functional Devices, 65-66, Dec, 1997 Peer-reviewedInvited
ナノエレクトロニクスの展望

花尻達郎, 松本善哉, 菅野卓雄

東洋大学工学部研究報告, 31 37-53, Dec, 1996
Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices

Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano

Proc.of Int.Symp.on Formation, Physics snd Device Application of Quantum Dot Structures, 144, Nov, 1996 Peer-reviewed
Experimental observation of Coulomb staircase in asymmetric tunnel barrier system

Y Matsumoto, T Hanajiri, T Toyabe, T Sugano

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 429-432, 1996
Single electron device with asymmetric tunnel barriers

Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano

Y.Matsumoto,T.Hanajiri,T.Toyabe andT.Sugano, 186-188, Aug, 1995 Peer-reviewed
Single Electron Transistor with Asymmetric Tunnel Barriers

New Technology Japan, 23(3) 16, Jun, 1995
電子の流れに方向性

日刊工業新聞, Apr, 1995
Characterization of density trap states at the back

A.Takubo, T.Hanajiriri, T.Sugano, K.Kajiyama

Proc.of IEEE 1995 Int. Conf. on Microelctronic Test Structures, 77-80, Mar, 1995 Peer-reviewed
化合物半導体MIS構造における界面特性の光学的評価法に関する研究

花尻達郎, 河東田隆

固体エレクトロニクス・オプトエレクトロニクス研究発表会（東京大学）, 21-30, Mar, 1994
光CVD法による窒化燐の堆積とInP MIS

花尻達郎, 河東田隆

東京大学工学部総合試験所年報, 51 41-44, Mar, 1994

Teaching Experience

Works

高度通信用高周波デバイスの開発

花尻達郎

2000 - 2008 Other
超低消費電力電子デバイスの為のシミュレーター開発

花尻達郎

1998 - 2000 Other

Research Projects

電気泳動コールター法(ECM)を医療用検査機器として実用化する為の新素材の活用

科研費、基盤研究（C）, 文部科学省, Apr, 2017 - Mar, 2020

花尻達郎
ソフトリソグラフィーを駆使したシリコンナノ構造の自在配線

科研費、基盤研究（C）, 文部科学省, Apr, 2012 - Mar, 2015

花尻達郎
セルソーターをトータルシステムとして本気でチップ化するには何が必要か?

科研費、基盤研究（C）, 文部科学省, Apr, 2009 - Mar, 2012

花尻達郎
ＳＯＱ基板を何にどう使うか？

科研費、基盤研究（C）, 文部科学省, Apr, 2006 - Mar, 2009

花尻達郎
非対称トンネル障壁を用いた単電子素子回路の設計および試作

科研費、奨励研究(A), 文部科学省, Apr, 1998 - Mar, 2001

花尻達郎
非対称トンネル障壁を有する単電子素子の設計及び試作

倉田奨励金, （財）倉田奨励金財団, Apr, 1999 - Mar, 2000

花尻達郎
ナノ電子デバイスの研究」

大型研究助成, （財）材料科学技術振興財団, Apr, 1997 - Mar, 1998

花尻達郎
自己整合工程を用いたシリコン集積化単電子素子回路の設計および試作

科研費、奨励研究(A), 文部科学省, Apr, 1996 - Mar, 1997

花尻達郎

Profile Information

Research Interests

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Research History

Education

Papers

Misc.

Teaching Experience

Works

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