2014年1月
Molecular Motion Induced by Multivibronic Excitation on Semiconductor Surface
JOURNAL OF PHYSICAL CHEMISTRY C
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- 巻
- 118
- 号
- 3
- 開始ページ
- 1554
- 終了ページ
- 1559
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/jp408775s
- 出版者・発行元
- AMER CHEMICAL SOC
A low-temperature observation with a scanning tunneling microscope (STM) of CO adsorbed on the Si(001) surface shows a peculiar change in adsorbate structure. Only after repeated scanning, approximately half of the adsorbed CO become visible as bright spots due to an irreversible lateral motion of the CO molecules, while at first the adsorbed CO is invisible to STM. The reaction rate of this motion shows hyperlinear dependence on the tunneling current. This implies that the adsorbate displacement is caused by multiple excitations of adsorbate vibronic modes, which is a mechanism thus far observed only at metal surfaces. We observe an activation barrier of 0.11 eV for the irreversible motion of CO, in agreement with the adiabatic potential obtained from first-principles calculation. The atomic-scale local heating is site-specific due to highly efficient inelastic scattering by charging of a surface-localized midgap state induced by the STM tip-sample bias voltage.
- リンク情報
- ID情報
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- DOI : 10.1021/jp408775s
- ISSN : 1932-7447
- Web of Science ID : WOS:000330252600017