2018年12月5日
Recent Progress in GaN Device Technology
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
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- 開始ページ
- 662
- 終了ページ
- 665
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1109/ICSICT.2018.8564898
- 出版者・発行元
- IEEE
© 2018 IEEE. Several new technologies for GaN high frequency devices and GaN power devices are reviewed. Newly developed GaN devices have a superior performance over conventional Si-based ones in view of lowering the energy loss and reducing the system size. Normally-off GaN HFETs are demonstrated.
- リンク情報
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- DOI
- https://doi.org/10.1109/ICSICT.2018.8564898
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000458919700194&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85060291340&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85060291340&origin=inward
- ID情報
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- DOI : 10.1109/ICSICT.2018.8564898
- SCOPUS ID : 85060291340
- Web of Science ID : WOS:000458919700194