2017年11月
Hall effect measurements of high-quality Mn3CuN thin films and the electronic structure
PHYSICAL REVIEW B
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- 巻
- 96
- 号
- 20
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.96.205153
- 出版者・発行元
- AMER PHYSICAL SOC
The physical properties of Mn3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (T-C) and a sign change of the Hall coefficient at T-C. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below T-C, which is discussed in relation to the electronic structure of this material.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.96.205153
- ISSN : 2469-9950
- eISSN : 2469-9969
- Web of Science ID : WOS:000416429800003