2022年5月1日
Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth
Japanese Journal of Applied Physics
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- 巻
- 61
- 号
- SC
- 開始ページ
- SC1034
- 終了ページ
- SC1034
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1347-4065/ac44cd
- 出版者・発行元
- {IOP} Publishing
<title>Abstract</title>
A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by the reduction of the Ga-oxide (GaO<italic>
x
</italic>) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaO<italic>
x
</italic> growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaO<italic>
x
</italic>/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.
A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by the reduction of the Ga-oxide (GaO<italic>
x
</italic>) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaO<italic>
x
</italic> growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaO<italic>
x
</italic>/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.
- リンク情報
- ID情報
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- DOI : 10.35848/1347-4065/ac44cd
- ISSN : 0021-4922
- eISSN : 1347-4065
- ORCIDのPut Code : 108241689