2017年
Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide
Microelectronic Engineering
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- 巻
- 178
- 号
- 開始ページ
- 186
- 終了ページ
- 189
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.mee.2017.05.042
- 出版者・発行元
- ELSEVIER
Design of thermal oxidation processes has a crucial role to control the metal-oxide-semiconductor (MOS) interface characteristics of 4H-SiC The effects of the oxidant species, i.e. O-2 or H2O on MOS interface properties on both 4H-SiC (0001) Si-face and (000-1) C-face were systematically investigated from the viewpoints of SiO2 growth kinetics and near-interface oxide microscopic structures, as well as those of electrical characteristics of MOS capacitors. As the possible origins of the significantly different MOS electrical properties between dry and wet-oxidized interfaces, the differences in the interface reaction mechanisms to grow SiO2 and those in the strained structure of near-interface SiO2 are indicated. The requirement for the control of O-2:H2O ratio in the oxidizing ambient to optimize the MOS characteristics was also investigated. (C) 2017 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.mee.2017.05.042
- ISSN : 0167-9317
- eISSN : 1873-5568
- ORCIDのPut Code : 45785852
- Web of Science ID : WOS:000404703800043