2020年7月27日
Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering
Applied Physics Letters
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- 巻
- 117
- 号
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0012324
- 出版者・発行元
- AMER INST PHYSICS
Although the channel resistance is partially reduced by suppressing 4H-SiC/SiO2 interface trapping, interface scattering still presents a problem. To clearly extract the effective-field (E-eff) dependence of the dominant scattering, a body biasing technique was adopted, under the condition that the charge density is constant to fix the screening effect. The electron mobilities were observed to be several fold higher for a-, m-, and (0 (3) over bar3 (8) over bar) faces than for Si- and C-faces. This result is primarily due to a magnitude difference in the E-eff-dependent scattering; thus, the difference is emphasized at higher Eeff values. Physical parameters to reproduce the observed mobility were estimated by simulating Coulomb and roughness scattering.
- リンク情報
- ID情報
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- DOI : 10.1063/5.0012324
- ISSN : 0003-6951
- eISSN : 1077-3118
- ORCIDのPut Code : 77946943
- Web of Science ID : WOS:000556919200001