論文

査読有り
2020年7月27日

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Applied Physics Letters
  • Hirohisa Hirai
  • ,
  • Tetsuo Hatakeyama
  • ,
  • Mitsuru Sometani
  • ,
  • Mitsuo Okamoto
  • ,
  • Shinsuke Harada
  • ,
  • Hajime Okumura
  • ,
  • Hiroshi Yamaguchi

117
4
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/5.0012324
出版者・発行元
AMER INST PHYSICS

Although the channel resistance is partially reduced by suppressing 4H-SiC/SiO2 interface trapping, interface scattering still presents a problem. To clearly extract the effective-field (E-eff) dependence of the dominant scattering, a body biasing technique was adopted, under the condition that the charge density is constant to fix the screening effect. The electron mobilities were observed to be several fold higher for a-, m-, and (0 (3) over bar3 (8) over bar) faces than for Si- and C-faces. This result is primarily due to a magnitude difference in the E-eff-dependent scattering; thus, the difference is emphasized at higher Eeff values. Physical parameters to reproduce the observed mobility were estimated by simulating Coulomb and roughness scattering.

リンク情報
DOI
https://doi.org/10.1063/5.0012324
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000556919200001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/5.0012324
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • ORCIDのPut Code : 77946943
  • Web of Science ID : WOS:000556919200001

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