論文

2021年8月

Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

APPLIED PHYSICS LETTERS
  • Hirohisa Hirai
  • ,
  • Yoshinao Miura
  • ,
  • Akira Nakajima
  • ,
  • Shinsuke Harada
  • ,
  • Hiroshi Yamaguchi

119
7
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/5.0060415
出版者・発行元
AMER INST PHYSICS

We systematically characterized gallium nitride (GaN) metal-oxide semiconductor interfaces formed on trench sidewalls, paying particular attention to eliminating the parasitic capacitance caused by the trench bottom. The flatband voltage (V-fb) was found to be clearly higher on the m-face trench than on the a-face trench, and an interface state density of similar to 1 x 10(11) cm(-2 )eV(-1) near the conduction band edge was achieved, irrespective of the trench direction. For trench sidewalls treated with a tetramethyl ammonium hydroxide (TMAH) solution, variation in V-fb among the trench direction was suppressed, reflecting that microscopic m-faces were generated after the TMAH treatment, irrespective of the direction of the trench. Therefore, the origin of the V-fb variation was attributed to the GaN crystal face dependence of fixed charge density at SiO2/GaN interfaces.


リンク情報
DOI
https://doi.org/10.1063/5.0060415
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000685161900001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/5.0060415
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • Web of Science ID : WOS:000685161900001

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