Papers

Peer-reviewed
May, 2014

Transistor application of alkyl-substituted picene

SCIENTIFIC REPORTS
  • Hideki Okamoto
  • ,
  • Shino Hamao
  • ,
  • Hidenori Goto
  • ,
  • Yusuke Sakai
  • ,
  • Masanari Izumi
  • ,
  • Shin Gohda
  • ,
  • Yoshihiro Kubozono
  • ,
  • Ritsuko Eguchi

Volume
4
Number
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1038/srep05048
Publisher
NATURE PUBLISHING GROUP

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, m, in a picene-(C14H29)(2) thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached similar to 21 cm(2) V-1 s(-1), which is the highest mu value recorded for organic thin-film FETs; the averagem mu value (<mu >) evaluated from twelve FET devices was 14(4) cm(2)V(-1) s(-1). The, m. values for picene-(C14H29)(2) thin- film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm(2) V-1 s(-1), and the lowest absolute threshold voltage, vertical bar V-th vertical bar, (5.2 V) was recorded with a PZT gate dielectric; the average jVthj for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)(2) FET was also fabricated with an SiO2 gate dielectric, yielding mu = 3.4 x 10(-2) cm(2) V-1 s(-1). These results verify the effectiveness of picene-(C14H29)(2) for electronics applications.

Link information
DOI
https://doi.org/10.1038/srep05048
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000336264200003&DestApp=WOS_CPL
ID information
  • DOI : 10.1038/srep05048
  • ISSN : 2045-2322
  • Web of Science ID : WOS:000336264200003

Export
BibTeX RIS