2013
Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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- Volume
- 15
- Number
- 47
- First page
- 20611
- Last page
- 20617
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1039/c3cp53598c
- Publisher
- ROYAL SOC CHEMISTRY
Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V-1 s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6] phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6] phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.
- Link information
- ID information
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- DOI : 10.1039/c3cp53598c
- ISSN : 1463-9076
- eISSN : 1463-9084
- Web of Science ID : WOS:000327249700023