論文

査読有り
2021年1月15日

Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

Scripta Materialia
  • Takashi Matsumae
  • ,
  • Yuichi Kurashima
  • ,
  • Hideki Takagi
  • ,
  • Hitoshi Umezawa
  • ,
  • Eiji Higurashi

191
開始ページ
52
終了ページ
55
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.scriptamat.2020.09.006
出版者・発行元
PERGAMON-ELSEVIER SCIENCE LTD

Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250°C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H2SO4/H2O2 and NH3/H2O2 mixtures, whereas the Si wafer was irradiated using oxygen plasma. By applying the pressure during the annealing process, the substrates were entirely bonded, except for the contaminated areas. The bonded specimen was fractured when a shear force of 1.7 MPa was applied. The electron microscopic observation indicated that the diamond and Si substrates were atomically bonded through a 3-nm-thick SiO2 layer without significant loss of diamond crystallinity. The integration of diamond (100) substrates on an Si wafer would contribute to the fabrication of future diamond devices.

リンク情報
DOI
https://doi.org/10.1016/j.scriptamat.2020.09.006
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000582135200010&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85090928431&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85090928431&origin=inward
ID情報
  • DOI : 10.1016/j.scriptamat.2020.09.006
  • ISSN : 1359-6462
  • SCOPUS ID : 85090928431
  • Web of Science ID : WOS:000582135200010

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