2020年11月16日
Heterogeneous direct bonding of diamond and semiconductor substrates using NH<inf>3</inf>/H<inf>2</inf>O<inf>2</inf>cleaning
Applied Physics Letters
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- 巻
- 117
- 号
- 20
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0026348
- 出版者・発行元
- AMER INST PHYSICS
A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 °C, the bonding strength was sufficiently high so that cleavage within diamond occurred in a shear test. Moreover, the diamond and Si substrates treated with the NH3/H2O2 mixture could form atomic bonds with a 2.5-nm-thick oxide intermediate layer. This bonding method can be applied to electronic devices using diamond because heterogeneous integration can be achieved using a popular wafer cleaning process followed by low-temperature annealing.
- リンク情報
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- DOI
- https://doi.org/10.1063/5.0026348
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000595259500001&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85096593762&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85096593762&origin=inward
- ID情報
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- DOI : 10.1063/5.0026348
- ISSN : 0003-6951
- eISSN : 1077-3118
- ORCIDのPut Code : 83600314
- SCOPUS ID : 85096593762
- Web of Science ID : WOS:000595259500001