2014年1月
Low-Power Widely Tunable Gm-C Filter Employing an Adaptive DC-blocking, Triode-Biased MOSFET Transconductor
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- ,
- ,
- ,
- 巻
- 61
- 号
- 1
- 開始ページ
- 37
- 終了ページ
- 47
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TCSI.2013.2268291
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
We propose a transconductor capable of providing a wide continuous-tuning-range filter applicable to Bluetooth, W-CDMA, LTE, and IEEE 802.11a/b/g W-LANs without sacrificing power consumption or die area. The wide tuning range is achieved without the need for any array configuration, using triode-biased input MOSFETs with transconductance that is widely tunable by means of drain bias adjustment. The transconductor also uses an adaptive DC-blocking circuit that suppresses bias current in a high transconductance mode, which results in minimizing transconductor power consumption.
A 4th-order Butterworth low-pass filter using this transconductor, fabricated in a 0.18-mu m CMOS process, exhibits a cut-off frequency tuning range of 0.3-12 MHz with a current consumption of 0.6-2.6 mA. The die area is small: 0.125 mm(2).
A 4th-order Butterworth low-pass filter using this transconductor, fabricated in a 0.18-mu m CMOS process, exhibits a cut-off frequency tuning range of 0.3-12 MHz with a current consumption of 0.6-2.6 mA. The die area is small: 0.125 mm(2).
- リンク情報
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- DOI
- https://doi.org/10.1109/TCSI.2013.2268291
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000330037500005&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84892582113&origin=inward
- ID情報
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- DOI : 10.1109/TCSI.2013.2268291
- ISSN : 1549-8328
- eISSN : 1558-0806
- SCOPUS ID : 84892582113
- Web of Science ID : WOS:000330037500005