2008年10月16日
Experimental study on dynamic behavior of power MOSFET based on capacitance-voltage characteristics (電子デバイス)
電子情報通信学会技術研究報告. ED, 電子デバイス
- ,
- ,
- 巻
- 108
- 号
- 262
- 開始ページ
- 111
- 終了ページ
- 116
- 記述言語
- 英語
- 掲載種別
- 出版者・発行元
- 一般社団法人電子情報通信学会
Dynamic behaviors of power MOSFET, classically, are related to parasitic capacitances, which are measured as inter-terminal capacitances. The aim of this paper is to model the dynamic behaviors of power MOSFET based on the physical structure of the device and extract model parameters from the measured C-V characteristics. The simulated results in switching behavior of the proposed model coincide with experimental results suitably.
- リンク情報
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- CiNii Articles
- http://ci.nii.ac.jp/naid/110007081638
- CiNii Books
- http://ci.nii.ac.jp/ncid/AN10012954
- URL
- http://id.ndl.go.jp/bib/9704536
- ID情報
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- ISSN : 0913-5685
- CiNii Articles ID : 110007081638
- CiNii Books ID : AN10012954