Hiroaki Sukegawa

J-GLOBAL         Last updated: Dec 12, 2018 at 22:40
Hiroaki Sukegawa
National Institute for Materials Science

Research Areas


Academic & Professional Experience

Apr 2018
Principal researcher, Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
Apr 2014
Mar 2018
Senior researcher, National Institute for Materials Science
Apr 2007
Mar 2014
Researcher, National Institute for Materials Science


Oct 2004
Mar 2007
Department of Materials Science, Graduate School of Engineering, Tohoku University
Oct 2002
Sep 2004
Department of Materials Science, Graduate School of Engineering, Tohoku University
Apr 1999
Sep 2002
Department of Materials Science, School of Engineering, Tohoku University

Published Papers

H. Onoda, H. Sukegawa, E. Kita, H. Yanagihara
IEEE Transactions on Magnetics   54    Nov 2018
© 1965-2012 IEEE. We have investigated the properties of cobalt ferrite (CFO)(001) epitaxial thin films grown by RF magnetron sputtering method on various buffer layers to induce large perpendicular magnetic anisotropy (PMA) through the magneto-el...
Applied Physics Express      Jun 2018   [Refereed]
Jason Paul Hadorn, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono
Acta Materialia   145 306   Feb 2018   [Refereed]
Masaya Kudo, Keisuke Sato, Hiroaki Sukegawa, Kenji Hirakuri
Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)   102 215-219   Jan 2018
© 2018 The Illuminating Engineering Institute of Japan. All rights reserved. Magneto-fluorescent microparticles are novel biomedical materials because they can diagnostically trace disease sites with fluorescence imaging while performing hyperther...
Chulmin Choi, Hiroaki Sukegawa, Seiji Mitani, Yunheub Song
Semiconductor Science and Technology   33    Jan 2018
© 2017 IOP Publishing Ltd. A ramped voltage stress (RVS) method to screen defective magnetic tunnel junctions (MTJs) is investigated in order to improve screen accuracy and shorten test time. Approximately 1500 MTJs with 1.25 nm thick tunnel barri...
Ikhtiar, Hiroaki Sukegawa, Xiandong Xu, Mohamed Belmoubarik, Hwachol Lee, Shinya Kasai, Kazuhiro Hono
Applied Physics Letters   112(2) 022408   Jan 2018   [Refereed]
Qingyi Xiang, Qingyi Xiang, Zhenchao Wen, Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai, Takeshi Seki, Takeshi Seki, Takahide Kubota, Takahide Kubota, Koki Takanashi, Koki Takanashi, Seiji Mitani, Seiji Mitani
Journal of Physics D: Applied Physics   50    Sep 2017
© 2017 IOP Publishing Ltd. The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(0 0 1) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measu...
Chul Min Choi, Hiroaki Sukegawa, Seiji Mitani, Yun Heub Song
Semiconductor Science and Technology   32    Sep 2017
© 2017 IOP Publishing Ltd. We investigated time-dependent dielectric breakdown (TDDB) modeling for MgO dielectrics with/without Mg insertion of MgO-based magnetic tunnel junctions (MTJs). The number of permanent trap sites at the no-Mg insertion i...
C. M. Choi, H. Sukegawa, S. Mitani, Y. H. Song
Electronics Letters   53 1146-1148   Aug 2017
© The Institution of Engineering and Technology 2017. MgAl2O4(MAO)-based magnetic tunnel junctions (MTJs) with an MAO thickness of ∼1.25 nm are fabricated and their cycling characteristics under dynamic voltage stress are evaluated. The speed of b...
Y. K. Takahashi, Y. Miura, Y. Miura, Y. Miura, R. Choi, T. Ohkubo, Z. C. Wen, K. Ishioka, R. Mandal, R. Medapalli, H. Sukegawa, S. Mitani, E. E. Fullerton, K. Hono
Applied Physics Letters   110    Jun 2017
© 2017 Author(s). We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. ...
Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono
AIP Advances   7    May 2017
© 2016 Author(s). We investigated the effect of an Mg-Al layer insertion at the bottom interface of epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) rati...
Zhenchao Wen, Zhenchao Wen, Jason Paul Hadorn, Jun Okabayashi, Hiroaki Sukegawa, Tadakatsu Ohkubo, Koichiro Inomata, Seiji Mitani, Seiji Mitani, Kazuhiro Hono, Kazuhiro Hono
Applied Physics Express   10    Jan 2017
© 2017 The Japan Society of Applied Physics. The interfacial atomic structure of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures, which is related to the interface-induced perpendicular magnetic anisotropy (PMA), was investigated using scann...
Wen Zhenchao, Sukegawa Hiroaki, Seki Takeshi, Kubota Takahide, Takanashi Koki, Mitani Seiji
Scientific Reports   7    2017   [Refereed]
Kim Kyungjun, Choi Chulmin, Oh Youngtaek, Sukegawa Hiroaki, Mitani Seiji, Song Yunheub
Japanese Journal of Applied Physics   56(4)    2017   [Refereed]
Choi C. M, Sukegawa H, Mitani S, Song Y. H.
Electronics Letters   53(2) 119-120   2017   [Refereed]
Sukegawa Hiroaki, Hadorn Jason Paul, Wen Zhenchao, Ohkubo Tadakatsu, Mitani Seiji, Hono Kazuhiro
Applied Physics Letters   110(11)    2017   [Refereed]
Sukegawa Hiroaki, Kato Yushi, Belmoubarik Mohamed, Cheng P. -H, Daibou Tadaomi, Shimomura Naoharu, Kamiguchi Yuuzo, Ito Junichi, Yoda Hiroaki, Ohkubo Tadakatsu, Mitani Seiji, Hono Kazuhiro
Applied Physics Letters   110(12)    2017   [Refereed]
Thomas Scheike, Thomas Scheike, Hiroaki Sukegawa, Seiji Mitani, Seiji Mitani
Japanese Journal of Applied Physics   55    Nov 2016
© 2016 The Japan Society of Applied Physics. Epitaxial magnetic tunnel junctions (MTJs) with a Li-substituted spinel MgAl2O4barrier were prepared by sputtering and plasma oxidation of an Mg/LiAl bilayer. The formed MTJ with Fe(001) electrodes show...
Hwachol Lee, Hiroaki Sukegawa, Jun Liu, Seiji Mitani, Kazuhiro Hono
Applied Physics Letters   109    Oct 2016
© 2016 Author(s). We report the tunable magnetic properties and the smoothened surface morphology of epitaxial D022Mn-Ga (Mn3Ga and Mn2.5Ga) films by N doping using reactive sputtering at 480 °C. The 50 nm thick Mn-Ga films grown with the N2/Ar ga...
Hwachol Lee, Hiroaki Sukegawa, Jun Liu, Jun Liu, Zhenchao Wen, Seiji Mitani, Seiji Mitani, Kazuhiro Hono, Kazuhiro Hono
IEEE Transactions on Magnetics   52    Jul 2016
© 1965-2012 IEEE. We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack w...


H. Sukegawa, Y. Kato, M. Belmoubarik, P. Cheng, P. Cheng, T. Daibou, N. Shimomura, Y. Kamiguchi, J. Ito, H. Yoda, T. Ohkubo, S. Mitani, S. Mitani, K. Hono, K. Hono
2017 IEEE International Magnetics Conference, INTERMAG 2017      Aug 2017
© 2017 IEEE. MgO barrier based magnetic tunnel junctions (MTJs) have drawn great attention because of their important spintronic device applications such as read heads of hard disk drives and non-volatile magnetoresistive random access memories (M...
Z. Wen, H. Sukegawa, S. Kasai, K. Inomata, S. Mitani
2015 IEEE International Magnetics Conference, INTERMAG 2015      Jan 2015
© 2015 IEEE. Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its...
Keisuke Sato, Keisuke Sato, Kenji Hirakuri, Kouki Fujioka, Yoshinobu Manome, Hiroaki Sukegawa, Hideo Iwai, Naoki Fukata
Materials Research Society Symposium Proceedings   1660 7-12   Jan 2014
© 2014 Materials Research Society. Magnetic/fluorescent (magnetofluorescent) materials have become one of the most important tools in the imaging modality in vivo using magnetic resonance imaging (MRI) and fluorescence imaging. We succeeded in fab...
Nakane R, Shuto Y, Sukegawa H, Wen Z. C, Yamamoto S, Mitani S, Tanaka M, Inomata K, Sugahara S, IEEE
2013 Proceedings of the European Solid-State Device Research Conference (Essderc)   272-275   Jan 2013   [Refereed]
We demonstrated monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of...
Kouichiro Inomata, Hiroaki Sukegawa
Spintronics: From Materials to Devices   303-330   Jan 2013
© Springer Science+Business Media Dordrecht 2013. This work reports on the structural and magnetic properties of the Heusler Co2FeAlxSi1−xepitaxial thin films and their applications to magnetic tunnel junctions (MTJs), giant magnetoresistive (GMR)...
Y. Shuto, Y. Shuto, S. Yamamoto, S. Yamamoto, H. Sukegawa, H. Sukegawa, Z. C. Wen, Z. C. Wen, R. Nakane, R. Nakane, S. Mitani, S. Mitani, M. Tanaka, M. Tanaka, K. Inomata, K. Inomata, S. Sugahara
Technical Digest - International Electron Devices Meeting, IEDM      Dec 2012
The design and performance of pseudo-spin-MOSFETs (PS-MOSFETs) using nano-CMOS devices were computationally investigated. The operations of a PS-MOSFET with current-induced magnetization switching were also experimentally demonstrated by the hybri...
H. Sukegawa, S. Nakamura, A. Hirohata, N. Tezuka, N. Tezuka, S. Sugimoto, K. Inomata, K. Inomata
INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference   1002   Dec 2005


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