MISC

2017年8月10日

Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa2O4

2017 IEEE International Magnetics Conference, INTERMAG 2017
  • H. Sukegawa
  • ,
  • Y. Kato
  • ,
  • M. Belmoubarik
  • ,
  • P. Cheng
  • ,
  • T. Daibou
  • ,
  • N. Shimomura
  • ,
  • Y. Kamiguchi
  • ,
  • J. Ito
  • ,
  • H. Yoda
  • ,
  • T. Ohkubo
  • ,
  • S. Mitani
  • ,
  • K. Hono

記述言語
英語
掲載種別
DOI
10.1109/INTMAG.2017.8007796
出版者・発行元
Institute of Electrical and Electronics Engineers Inc.

MgO barrier based magnetic tunnel junctions (MTJs) have drawn great attention because of their important spintronic device applications such as read heads of hard disk drives and non-volatile magnetoresistive random access memories (MRAMs).

リンク情報
DOI
https://doi.org/10.1109/INTMAG.2017.8007796
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85034638636&origin=inward

エクスポート
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