MISC

2015年

Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization.

2015 IEEE MAGNETICS CONFERENCE (INTERMAG)
  • Z. Wen
  • ,
  • H. Sukegawa
  • ,
  • S. Kasai
  • ,
  • K. Inomata
  • ,
  • S. Mitani

記述言語
英語
掲載種別
研究発表ペーパー・要旨(国際会議)
DOI
10.1109/INTMAG.2015.7157500
出版者・発行元
IEEE

© 2015 IEEE. Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.


リンク情報
DOI
https://doi.org/10.1109/INTMAG.2015.7157500
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000381606001410&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84942446735&origin=inward

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