論文

査読有り
2017年

MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

Applied Physics Letters
  • Sukegawa, Hiroaki
  • Kato, Yushi
  • Belmoubarik, Mohamed
  • Cheng, P. -H.
  • Daibou, Tadaomi
  • Shimomura, Naoharu
  • Kamiguchi, Yuuzo
  • Ito, Junichi
  • Yoda, Hiroaki
  • Ohkubo, Tadakatsu
  • Mitani, Seiji
  • Hono, Kazuhiro
  • 全て表示

110
12
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.4977946
出版者・発行元
AMER INST PHYSICS

Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product. Published by AIP Publishing.

リンク情報
DOI
https://doi.org/10.1063/1.4977946
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000397872000029&DestApp=WOS_CPL
URL
http://orcid.org/0000-0002-4034-7848
ID情報
  • DOI : 10.1063/1.4977946
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • ORCIDのPut Code : 33949582
  • SCOPUS ID : 85016164410
  • Web of Science ID : WOS:000397872000029

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