2017年
MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height
Applied Physics Letters
- 巻
- 110
- 号
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4977946
- 出版者・発行元
- AMER INST PHYSICS
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product. Published by AIP Publishing.
- リンク情報
- ID情報
-
- DOI : 10.1063/1.4977946
- ISSN : 0003-6951
- eISSN : 1077-3118
- ORCIDのPut Code : 33949582
- SCOPUS ID : 85016164410
- Web of Science ID : WOS:000397872000029