論文

査読有り
2018年1月8日

Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers

Applied Physics Letters
  • Ikhtiar
  • ,
  • Hiroaki Sukegawa
  • ,
  • Xiandong Xu
  • ,
  • Mohamed Belmoubarik
  • ,
  • Hwachol Lee
  • ,
  • Shinya Kasai
  • ,
  • Kazuhiro Hono

112
2
開始ページ
022408
終了ページ
022408
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.5013076
出版者・発行元
{AIP} Publishing

Although single-crystalline spinel (MgAl2O4)-based magnetic tunnel junctions (MTJs) are known to show a good bias voltage dependence of a tunnel magnetoresistance (TMR) ratio over MgO-based MTJs, no polycrystalline MgAl2O4-based MTJs exhibiting large TMR ratios have been grown previously due to the lack of crystallinity of the MgAl2O4 barrier. In this work, we demonstrate the growth of polycrystalline-based MTJs with large TMR ratios exceeding 240% and an improved bias voltage dependence compared to that of MgO-based MTJs. An ultra-thin CoFe/MgO seed layer on the amorphous CoFeB layer induced the growth of a highly (001)-textured MgAl2O4 barrier, which worked as a template layer for the solid epitaxy of CoFe grains during the crystallization of the CoFeB layers. High resolution scanning transmission electron microscopy shows lattice-matched epitaxy between the (001)-textured MgAl2O4 barrier and CoFe grains. This study demonstrates the industrial viability of MgAl2O4-based polycrystalline MTJs with an improved bias voltage dependence.

リンク情報
DOI
https://doi.org/10.1063/1.5013076
URL
http://orcid.org/0000-0002-4034-7848
ID情報
  • DOI : 10.1063/1.5013076
  • ISSN : 0003-6951
  • ORCIDのPut Code : 40415376
  • SCOPUS ID : 85040569311

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