論文

2018年1月

Investigation of ramped voltage stress to screen defective magnetic tunnel junctions

SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Chulmin Choi
  • ,
  • Hiroaki Sukegawa
  • ,
  • Seiji Mitani
  • ,
  • Yunheub Song

33
1
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/1361-6641/aa99bb
出版者・発行元
IOP PUBLISHING LTD

A ramped voltage stress (RVS) method to screen defective magnetic tunnel junctions (MTJs) is investigated in order to improve screen accuracy and shorten test time. Approximately 1500 MTJs with 1.25 nm thick tunnel barriers were fabricated for this evaluation, and normal MTJs show a 189% tunnel magnetoresistance ratio, a 365 Omega m(2) resistance-area product, and a 1.8 V breakdown voltage, which is enough for applying reliable screen tests. We successfully classified MTJs as normal MTJs having good characteristics or defective MTJs having insufficient endurance and showing resistance degradation after only short-term cycling. Using the RVS screen test with low ramp speed, it is demonstrated that remarkable screening performance and little dependence on temperature are obtained for short test time.


リンク情報
DOI
https://doi.org/10.1088/1361-6641/aa99bb
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000417500500006&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85038634559&origin=inward
ID情報
  • DOI : 10.1088/1361-6641/aa99bb
  • ISSN : 0268-1242
  • eISSN : 1361-6641
  • SCOPUS ID : 85038634559
  • Web of Science ID : WOS:000417500500006

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