論文

2017年8月

Endurance of magnetic tunnel junctions under dynamic voltage stress

ELECTRONICS LETTERS
  • C. M. Choi
  • ,
  • H. Sukegawa
  • ,
  • S. Mitani
  • ,
  • Y. H. Song

53
16
開始ページ
1146
終了ページ
1147
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1049/el.2017.1579
出版者・発行元
INST ENGINEERING TECHNOLOGY-IET

MgAl2O4 (MAO)-based magnetic tunnel junctions (MTJs) with an MAO thickness of similar to 1.25 nm are fabricated and their cycling characteristics under dynamic voltage stress are evaluated. The speed of breakdown strongly depended on the pulse polarities used, bipolar, positive (+) unipolar, and negative (-) unipolar. The bipolar condition yielded more rapid breakdown under cycling. Between the two unipolar conditions, positive bias yielded more rapid breakdown than negative bias; the difference between these is understood to arise from the conditions of the interface between the MAO and ferromagnetic layers. Among apparently normal MTJ cells showing little resistance drift, 20% were degraded during a long cycling test in the bipolar stress condition. Thus, the use of bipolar voltage stress is essential to screen for potentially defective MTJs, and the asymmetric condition at the interface is minimised by process control for application of the simple unipolar bias condition.

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.1049/el.2017.1579
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000407761900035&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85027468958&origin=inward
ID情報
  • DOI : 10.1049/el.2017.1579
  • ISSN : 0013-5194
  • eISSN : 1350-911X
  • SCOPUS ID : 85027468958
  • Web of Science ID : WOS:000407761900035

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