We report the growth of (001)-textured polycrystalline D0(22) MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg0.2Ti0.8)O (MTO) buffer layer. The ordered D0(22) MnGa film grown at the optimum substrate temperature of 530 degrees C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m(3), and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D022 MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates. (C) 2015 AIP Publishing LLC.