Creep behavior of gamma-TiAl based alloy at 1073 K with microstructure of equiaxed gamma (E gamma), gamma/gamma fully lamellar (FL gamma) and equiaxed gamma with alpha 2 phase on grain boundary (E gamma alpha 2) has been examined in order to investigate the effect of lamellar interface and grain boundary alpha 2 phase on creep behavior. Creep rates immediately after loading is equal in all specimens. However, E gamma shows progressive decrease in creep rate compared with E gamma alpha 2 and FL gamma. The minimum creep rate of E gamma is one order of magnitude lower than that of E gamma alpha 2 and FL gamma. On the other hands, E gamma alpha 2 and FL gamma shows small degree of acceleration and longest rupture strain although shortest rupture time compared with E gamma. Microstructural analysis of crept specimen revealed that many dynamic recrystallized grains (DXGs) and sub -grains are formed at regions along the grain boundaries and grain interiors in E gamma, whereas they are formed in the region limited to grain boundaries in FL gamma. On the other hands, very few DXGs were formed in E gamma alpha 2. Based on these results, it is clear that gamma/gamma interfaces suppress the extension of DXGs forward grain interiors. It should also be suggested that the grain boundary alpha 2 phase is effective in suppressing formation of DXGs.