論文

査読有り
2016年9月

Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect

JOURNAL OF APPLIED PHYSICS
  • Toshiki Gushi
  • ,
  • Keita Ito
  • ,
  • Soma Higashikozono
  • ,
  • Fumiya Takata
  • ,
  • Hirotaka Oosato
  • ,
  • Yoshimasa Sugimoto
  • ,
  • Kaoru Toko
  • ,
  • Syuta Honda
  • ,
  • Takashi Suemasu

120
11
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.4962721
出版者・発行元
AMER INST PHYSICS

The magnetic structure of the domain wall (DW) of a 30-nm-thick Fe4N epitaxial film with a negative spin polarization of the electrical conductivity is observed by magnetic force microscopy and is well explained by micromagnetic simulation. The Fe4N film is grown by molecular beam epitaxy on a SrTiO3(001) substrate and processed into arc-shaped ferromagnetic nanostrips 0.3 mu m wide by electron beam lithography and reactive ion etching with Cl-2 and BCl3 plasma. Two electrodes mounted approximately 12 mu m apart on the nanostrip register an electrical resistance at 8K. By changing the direction of an external magnetic field (0.2 T), the presence or absence of a DW positioned in the nanostrip between the two electrodes can be controlled. The resistance is increased by approximately 0.5 Omega when the DW is located between the electrodes, which signifies the negative anisotropic magnetoresistance effect of Fe4N. The electrical detection of the resistance change is an important step toward the electrical detection of current-induced DW motion in Fe4N. Published by AIP Publishing.

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.1063/1.4962721
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000384573200008&DestApp=WOS_CPL

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