2006年
Interfacial states and tunnel magnetoresistance of ferromagnetic semimetal/semiconductor junctions
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12
- ,
- ,
- 巻
- 3
- 号
- 12
- 開始ページ
- 4192
- 終了ページ
- 4195
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1002/pssc.200672845
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
Conductance and magnetoresistance of spin-polarized semi-metal(GdAs)/seniiconductor(GaAs) junctions are calculated by using a full-orbital tight-binding scheme and the linear response theory. It is shown that the magnetoresistance as well as conductance are strongly influenced by the presence of interfacial states. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- リンク情報
- ID情報
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- DOI : 10.1002/pssc.200672845
- ISSN : 1862-6351
- Web of Science ID : WOS:000245921400034