2019年2月
Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices
JOURNAL OF PHYSICS D-APPLIED PHYSICS
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- 巻
- 52
- 号
- 8
- 開始ページ
- 085102
- 終了ページ
- 085102
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/1361-6463/aaf37c
- 出版者・発行元
- IOP PUBLISHING LTD
We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along < 1 0 0 > (Si < 1 0 0 >) and < 1 1 0 > (Si < 1 1 0 >), we find that the magnitude of the spin signals for Si < 100 > LSV devices is always larger than that for Si < 1 1 0 > LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are comparable, while the spin injection/detection efficiency in Si < 1 0 0 > LSV devices is evidently larger than that in Si < 1 1 0 > ones. Possible origins of the difference in the spin injection/detection efficiency between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are discussed.
- リンク情報
- ID情報
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- DOI : 10.1088/1361-6463/aaf37c
- ISSN : 0022-3727
- eISSN : 1361-6463
- ORCIDのPut Code : 54824547
- Web of Science ID : WOS:000454220800001