論文

査読有り
2016年9月27日

Magnetic properties and interfacial characteristics of all-epitaxial Heusler-compound stacking structures

Physical Review B
  • S. Yamada
  • ,
  • S. Honda
  • ,
  • J. Hirayama
  • ,
  • M. Kawano
  • ,
  • K. Santo
  • ,
  • K. Tanikawa
  • ,
  • T. Kanashima
  • ,
  • H. Itoh
  • ,
  • K. Hamaya

94
9
開始ページ
094435-1
終了ページ
094435-7
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1103/PhysRevB.94.094435
出版者・発行元
American Physical Society

We study magnetic properties and interfacial characteristics of all-epitaxial D03-Fe3Si/L21- Fe3-xMnxSi/L21-Co2FeSi Heusler-compound trilayers grown on Ge(111) by room-temperature molecular beam epitaxy. We find that the magnetization reversal processes can be intentionally designed by changing the chemical composition of the intermediate Fe3-xMnxSi layers because of their tunable ferromagnetic-paramagnetic phase-transition temperature. From first-principles calculations, interfacial half metallicity in the Co2FeSi layer is nearly expected when the sequence of stacking layers along (111) of the Fe2MnSi/Co2FeSi interface includes the atomic row of L21- or B2-ordered structures. We believe that Co2FeSi/Fe2MnSi/Co2FeSi trilayer systems stacked along (111) will open a new avenue for high-performance current-perpendicular-to-plane giant magnetoresistive devices with Heusler compounds.

リンク情報
DOI
https://doi.org/10.1103/PhysRevB.94.094435

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