2010年
Integrated Radiation Image Sensors with SOI technology
2010 IEEE INTERNATIONAL SOI CONFERENCE
- ,
- ,
- ,
- ,
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1109/SOI.2010.5641403
- 出版者・発行元
- IEEE
We have developed monolithic radiation detectors based on a 0.2 mu m Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technology. It has both a thick, high-resistivity sensor layer and a thin LSI circuit layer in a single chip. To shield the electronics part from the sensor region, we have created a buried well region under the buried oxide (BOX) layer of the SOI wafer. Two type of detectors, integration and counting types, are being developed.
- リンク情報
- ID情報
-
- DOI : 10.1109/SOI.2010.5641403
- ISSN : 1078-621X
- Web of Science ID : WOS:000287366100060