2010年8月
Quantitative analysis of O-2 gas sensing characteristics of picene thin film field-effect transistors
ORGANIC ELECTRONICS
- 巻
- 11
- 号
- 8
- 開始ページ
- 1394
- 終了ページ
- 1398
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.orgel.2010.06.003
- 出版者・発行元
- ELSEVIER SCIENCE BV
O-2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop(TM) or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane-coated SiO2. The picene FETs show very sensitive O-2 gas sensing effects down to similar to 10 ppm. A quantitative analysis is presented of the gate voltage (V-G) dependent mobility induced by O-2 exposure, i.e., the suppression of drain current at high V-G. (C) 2010 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
-
- DOI : 10.1016/j.orgel.2010.06.003
- ISSN : 1566-1199
- eISSN : 1878-5530
- Web of Science ID : WOS:000280194400009