2006年1月
Strong electron correlation effects in nonvolatile electronic memory devices
APPLIED PHYSICS LETTERS
- ,
- ,
- 巻
- 88
- 号
- 3
- 開始ページ
- 033510/1-033510/3
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.2164917
- 出版者・発行元
- AMER INST PHYSICS
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.
- リンク情報
- ID情報
-
- DOI : 10.1063/1.2164917
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000234757100077