GaInN/GaN multiple quantum shells (MQS) nanowires and p-GaN shells were embedded with n-GaN layers through tunnel junction (TJ) shells using metalorganic chemical vapor deposition (MOCVD) method. The MQS nanowires were selectively grown on n-GaN/sapphire or GaN substrates. The fabrication process of laser structures with different resonators of 600500, 750, 1000 μm, and cavity widths of 7, 12, and 17 μm were investigated with insulating layer on the sidewalls of the ridge. The structures of the fabricated devices were characterized by scanning electron microscope (SEM) and current-voltage-light output characteristics were evaluated. Two different methods for mirror formation, etching and cleavage, were developed for the laser devices. During the investigation, a superior mirror formation suffered from the difference in etching rate between GaInN and GaN, generating concaves in the MQS region. Bluegreen light emission was observed from the entire ridge surface of the MQS index-guided laser structures. A maximum current density of emission at 17.9 kA/cm2 has been confirmed in the devices. The electroluminescence and cathodoluminescence measurements demonstrated that the r-plane and c-plane at the top of the MQS are dominant at low current densities, and the m-plane emission becomes stronger as the current density increases.