2021年6月
Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions
APPLIED PHYSICS EXPRESS
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- 巻
- 14
- 号
- 6
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1882-0786/ac0001
- 出版者・発行元
- IOP PUBLISHING LTD
We demonstrated room-temperature pulsed-operations of GaN-based blue edge-emitting laser diodes (LDs) with both the top and bottom AlInN cladding layers by using GaN tunnel junctions (TJs) grown by metalorganic vapor phase epitaxy. The LDs with a 1.2 mm cavity length and a 15 mu m ridge width were fabricated. We obtained a low threshold current density of 0.9 kA cm(-2) with facet coating. We found that while an optical absorption loss in the waveguiding layer was reduced with a low Mg concentration (3 x 10(18) cm(-3)), that in a highly doped TJ could be an obstacle to obtain further improvements of the laser characteristics.
- リンク情報
- ID情報
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- DOI : 10.35848/1882-0786/ac0001
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000655270900001