2022年1月15日
MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells
Journal of Crystal Growth
- 巻
- 578
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2021.126423
- 出版者・発行元
- ELSEVIER
In this study, the growth mechanisms of n-type gallium nitride (GaN) cap layers for embedding nanowire-based multi-quantum-shell (NW-MQS) with a tunnel junction were investigated using the metal–organic vapor-phase epitaxy method. Herein, instead of a p-type GaN layer, n-type GaN cap layers were applied as a contact layer to the anode electrode via a tunnel junction. NW-MQSs were prepared in a rectangular grid arrangement aligning with the m- and a-axis of GaN. The growth mode of the cap layers was controlled in three stages using different growth pressures and temperatures. The first cap layer was a faceted growth mode primarily comprising the r-plane, the second was a lateral growth mode that expanded the area of the c-plane, and the third was an acceleration of lateral growth. Finally, cap layers with a flat surface were realized. Void formation in the cap layers occurred only between the NW-MQSs along the m-axis of GaN. This observation can be attributed to the difference in the coalescence of the cap layers in the a- and m-axis directions. We believe that the NW-MQS structure with the cap layer that was optimized in this study can be used as a highly efficient optical device.
- リンク情報
-
- DOI
- https://doi.org/10.1016/j.jcrysgro.2021.126423
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000722185900005&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85119322679&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85119322679&origin=inward
- ID情報
-
- DOI : 10.1016/j.jcrysgro.2021.126423
- ISSN : 0022-0248
- eISSN : 1873-5002
- SCOPUS ID : 85119322679
- Web of Science ID : WOS:000722185900005