2022年4月
Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm-2) using a laser liftoff method
Applied Physics Express
- 巻
- 15
- 号
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1882-0786/ac5e64
- 出版者・発行元
- IOP Publishing Ltd
We have successfully fabricated vertical LEDs by separating a 1 × 1 cm2 wafer composed of deep-ultraviolet LED on a sapphire substrate from the substrate using a laser liftoff (LLO) method. Reproducible substrate separation was achieved by the LLO method using an Al0.68Ga0.32N underlayer film on an AlN template with periodic pillars. The fabricated vertical LED successfully demonstrated notable luminescence (peak wavelength: 298 nm) characteristics up to a current density of ∼43 kA cm-2 at room temperature and in pulsed drive, which is expected to be used in high-power LEDs and laser diodes.
- リンク情報
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- DOI
- https://doi.org/10.35848/1882-0786/ac5e64
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000773693800001&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85128369568&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85128369568&origin=inward
- ID情報
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- DOI : 10.35848/1882-0786/ac5e64
- ISSN : 1882-0778
- eISSN : 1882-0786
- SCOPUS ID : 85128369568
- Web of Science ID : WOS:000773693800001