MISC

査読有り
1997年

Range and damage distribution in cluster ion implantation

MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING
  • Yamada, I
  • ,
  • J Matsuo
  • ,
  • EC Jones
  • ,
  • D Takeuchi
  • ,
  • T Aoki
  • ,
  • K Goto
  • ,
  • T Sugii

438
開始ページ
363
終了ページ
374
記述言語
英語
掲載種別
出版者・発行元
MATERIALS RESEARCH SOCIETY

Cluster ion implantation is an attractive alternative to conventional ion implantation, particularly for shallow junction formation. It is easy to obtain high-current ion beams with low equivalent energy using cluster ion beams. The implanted boron distribution in 5keV B10H14 implanted Si is markedly shallower than that in 5keV BF2 ion implanted Si. The implanted depth is less than 0.04 mu m, indicating that cluster ion implantation is capable of forming shallow junctions. The sheet resistance of 3keV B10H14 implanted samples falls below 500 Omega/sq after annealing at 1000 degrees C for 10s. Shallow implantation can be realized by a high energy cluster beam without space-charge problems in the incident beam. Defect formation, resulting from local energy deposition and multiple collisions, is unique for cluster ions. The thickness of the damaged layer formed by cluster ion bombardment increases with the size of the cluster, if implant energy and ion dose remain constant. This is one of the nonlinear ''cluster effects,'' which may allow some control over the implant damage distributions that accompany implanted ions, and which have been shown to have a great effect on dopant redistribution during annealing.

リンク情報
J-GLOBAL
https://jglobal.jst.go.jp/detail?JGLOBAL_ID=200902163771941654
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1997BH43C00054&DestApp=WOS_CPL
ID情報
  • ISSN : 0272-9172
  • J-Global ID : 200902163771941654
  • Web of Science ID : WOS:A1997BH43C00054

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