1996年
Atomic level smoothing of CVD diamond films by gas cluster ion beam etching
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 112
- 号
- 1-4
- 開始ページ
- 248
- 終了ページ
- 251
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/0168-583X(95)01007-6
- 出版者・発行元
- Elsevier
Chemical vapor deposited diamond films on silicon substrates were etched by a gas cluster ion beam. We found that a gas cluster ion beam of 1017 ions/cm2 would be effective to smooth the surface of the CVD diamond films. It was confirmed that atomic level smooth surfaces (Ra = 1.9 nm by AFM measurements) were formed by Ar gas cluster ion beam (Ar+ 3000) etching. We believe that the gas cluster ion beam etching technique will be a key technology for diamond device fabrication.
- リンク情報
- ID情報
-
- DOI : 10.1016/0168-583X(95)01007-6
- ISSN : 0168-583X
- SCOPUS ID : 0030563228
- Web of Science ID : WOS:A1996UW20100051