A low-energy, high-dosage boron ion implantation technology using a decaborane (B10H14) molecule is developed, Since B10H14 consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and ten times higher effective beam current compared with those of boron. We demonstrated an ultrashallow boron profile with 0.5 keV effective acceleration energy, which does not cause transient enhanced diffusion (TED) after rapid thermal annealing (RTA). Using this technology, we succeeded in fabricating 0.1-mu m PMOSFET's with good device performances and excellent suppression of short-channel effects.