論文

査読有り
2005年

Glancing angle fluorescence XAFS study on metal oxide thin films obtained by oxygen gas cluster ion beam assisted deposition techniques

Physica Scripta T
  • H. Kageyama
  • ,
  • T. Asanuma
  • ,
  • T. Takeuchi
  • ,
  • K. Kadono
  • ,
  • J. Matsuo
  • ,
  • T. Seki
  • ,
  • T. Kitagawa
  • ,
  • N. Toyoda
  • ,
  • Y. Shimizugawa
  • ,
  • T. Uruga

T115
開始ページ
504
終了ページ
506
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1238/Physica.Topical.115a00504

Glancing angle fluorescence XAFS analysis of Ta and Ti oxide thin films, which were obtained by oxygen gas cluster ion beam assisted deposition techniques (GCIB), was made to analyze the valence states and the structures of the 'amorphous' thin films at atomic level. Glancing angle XAFS measurement was made for Ta L3-edge of the Ta oxide thin films and Ti K-edge of the Ti oxide thin films with 200 nm thickness, respectively, using the detection method of electron yield by conversion with He flow gas counter (CEY) at the beam line BL01B1 in the SPring-8. The Ta L3-XANES results indicate that the assistance of the oxygen GCIB leads to the higher oxidation state of the Ta atom. The Ta L3 and Ti K EXAFS results suggest that these metal oxide films obtained by the oxygen GCIB assisted deposition techniques have amorphous-like structure. © Physica Scripta 2005.

リンク情報
DOI
https://doi.org/10.1238/Physica.Topical.115a00504
ID情報
  • DOI : 10.1238/Physica.Topical.115a00504
  • ISSN : 0281-1847
  • SCOPUS ID : 42149090448

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