1993年6月20日
Chemical States of Bromine Atoms on SiO2 Surface after HBr Reactive Ion Etching: Analysis of Thin Oxide
Jpn J Appl Phys
- ,
- ,
- 巻
- 32
- 号
- 6
- 開始ページ
- 3063
- 終了ページ
- 3067
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.32.3063
- 出版者・発行元
- 社団法人応用物理学会
Low-energy ion scattering spectroscopy (ISS) and X-ray photoelectron spectroscopy (XPS) have been used to determine the nature of Br atoms on very thin thermal silicon dioxide (approximately 5 nm) after HBr reactive ion etching (RIE). The result of ISS clarified that the etched surface was covered with 1 monolayer Br. The Br atoms on the etched SiO2 surface were found, from the result of XPS analysis, to have two chemical adsorption states. The experiment of atomic Br exposure showed that one adsorption state was on the as-grown SiO2 surface and the other state was at the damaged sites induced by ion bombardment.
- リンク情報
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- DOI
- https://doi.org/10.1143/JJAP.32.3063
- CiNii Articles
- http://ci.nii.ac.jp/naid/110003899779
- CiNii Books
- http://ci.nii.ac.jp/ncid/AA10457675
- ID情報
-
- DOI : 10.1143/JJAP.32.3063
- ISSN : 0021-4922
- CiNii Articles ID : 110003899779
- CiNii Books ID : AA10457675