2006年7月
High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions
APPLIED SURFACE SCIENCE
- ,
- ,
- ,
- 巻
- 252
- 号
- 19
- 開始ページ
- 6550
- 終了ページ
- 6553
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.apsusc.2006.02.100
- 出版者・発行元
- ELSEVIER SCIENCE BV
Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Si-n(+) ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size. (c) 2006 Published by Elsevier B.V.
- リンク情報
- ID情報
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- DOI : 10.1016/j.apsusc.2006.02.100
- ISSN : 0169-4332
- Web of Science ID : WOS:000240609900039